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Size the transistors in the circuit below so that it has the same drive strength, in the worst case, as an inverter that has PW = 5 and NW = 3. Use the smallest widths possible to achieve this ratio. Write down the size next to each transistor

Size the transistors in the circuit below so that it has the same drive strength, in the worst case, as an inverter that has PW = 5 and NW = 3. Use the smallest widths possible to achieve this ratio. Write down the size next to each transistor

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Size the transistors in the circuit below so that it has the same drive strength, in the worst case, as an inverter that has PW = 5 and NW = 3. Use the smallest widths possible to achieve this ratio. Write down the size next to each transistor

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Size the transistors in the circuit below so that it has the same drive strength, in the worst case, as an inverter that has PW=3 and NW=2. Use the smallest widths possible to achieve this ratio. Write down the size next to each transistor.
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Vtn = 0.8 V, Vtp = -0.9 V, a) Find the logic expression for Z. What function does this circuit implement? b) Draw the pull-up network that completes the CMOS logic circuit. c) Assume that the equivalent inverter has an NMOS transistor with a minimum size of 2 um/250 nm. Determine the equivalent PMOS transistor dimensions (W/L) that ensure tPHL = tPLH for the equivalent inverter. d) Find the NMOS and PMOS transistor dimensions in the CMOS logic circuit so that the propagation delays are equal to the value you found for the inverter in c) for the worst case, assuming an equal load capacitance for both the inverter and the logic circuit. Vtn = 0.8 V, Vtp = -0.9 V, unCox = 250 uA/V2, upCox = 120 uA/V2 is given. The pull-down section of a CMOS logic circuit is shown below. = 250 a) Find the logic expression for Z. What function does this circuit implement? b) Draw the pull-up network that completes the CMOS logic circuit. c) Assume that the equivalent inverter has an NMOS transistor with a minimum size of 2 um/250 nm. Determine the equivalent PMOS transistor dimensions (W/L) that ensure tPHL = tPLH for the equivalent inverter. d) Find the NMOS and PMOS transistor dimensions in the CMOS logic circuit so that the propagation delays are equal to the value you found for the inverter in c) for the worst case, assuming an equal load capacitance for both the inverter and the logic circuit. Vtn = 0.8 V, Vtp = -0.9 V, unCox = 250 uA/V2, upCox = 120 uA/V2 is given. The pull-down section of a CMOS logic circuit is shown below., a) Find the logic expression for Z. What function does this circuit implement? b) Draw the pull-up network that completes the CMOS logic circuit. c) Assume that the equivalent inverter has an NMOS transistor with a minimum size of 2 um/250 nm. Determine the equivalent PMOS transistor dimensions (W/L) that ensure tPHL = tPLH for the equivalent inverter. d) Find the NMOS and PMOS transistor dimensions in the CMOS logic circuit so that the propagation delays are equal to the value you found for the inverter in c) for the worst case, assuming an equal load capacitance for both the inverter and the logic circuit. Vtn = 0.8 V, Vtp = -0.9 V, unCox = 250 uA/V2, upCox = 120 uA/V2 is given. The pull-down section of a CMOS logic circuit is shown below. =120 a) Find the logic expression for Z. What function does this circuit implement? b) Draw the pull-up network that completes the CMOS logic circuit. c) Assume that the equivalent inverter has an NMOS transistor with a minimum size of 2 um/250 nm. Determine the equivalent PMOS transistor dimensions (W/L) that ensure tPHL = tPLH for the equivalent inverter. d) Find the NMOS and PMOS transistor dimensions in the CMOS logic circuit so that the propagation delays are equal to the value you found for the inverter in c) for the worst case, assuming an equal load capacitance for both the inverter and the logic circuit. Vtn = 0.8 V, Vtp = -0.9 V, unCox = 250 uA/V2, upCox = 120 uA/V2 is given. The pull-down section of a CMOS logic circuit is shown below. is given. The pull-down section of a CMOS logic circuit is shown below.

a) Find the logic expression for Z. What function does this circuit implement?

b) Draw the pull-up network that completes the CMOS logic circuit.

c) Assume that the equivalent inverter has an NMOS transistor with a minimum size of 2 müm/250 nm. Determine the equivalent PMOS transistor dimensions (W/L) that ensure a) Find the logic expression for Z. What function does this circuit implement? b) Draw the pull-up network that completes the CMOS logic circuit. c) Assume that the equivalent inverter has an NMOS transistor with a minimum size of 2 um/250 nm. Determine the equivalent PMOS transistor dimensions (W/L) that ensure tPHL = tPLH for the equivalent inverter. d) Find the NMOS and PMOS transistor dimensions in the CMOS logic circuit so that the propagation delays are equal to the value you found for the inverter in c) for the worst case, assuming an equal load capacitance for both the inverter and the logic circuit. Vtn = 0.8 V, Vtp = -0.9 V, unCox = 250 uA/V2, upCox = 120 uA/V2 is given. The pull-down section of a CMOS logic circuit is shown below. for the equivalent inverter.

d) Find the NMOS and PMOS transistor dimensions in the CMOS logic circuit so that the propagation delays are equal to the value you found for the inverter in c) for the worst case, assuming an equal load capacitance for both the inverter and the logic circuit.

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Find Traditional CMOS realizations to the following truth table using Karnaugh map techniques. Find realizations based on grouping the 1 s. What is the worst-case equivalent resistor during a "0" to "1" transition of the output? Assume all transistors are 6um/0.6um. You may assume the inputs and their complements are available. Note that "d" designates a "don't care" situation. Use, Kn' = 190 uA/V2, VTN = 0.7 V for NMOS and Kp' = 50 uA/V2, VTP = -0.8 V for PMOS transistors, VDD = 3.3 V. 2. Repeat problem 1 but base your design on grouping "0"s. Design the W/L ratios of each MOSFET so that the gate will have the same response of a CMOS inverter whose n-channel pull down transistor has WN/LN = 8um/2um. Use channel length of 2 um for each transistor.
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