Suppose a battery VB > 0 is connected between the gate and drain of an ideal n-channel MOSFET as in the figure below. Using the ideal ID−VDS characteristics (square law) (a) Find the relation between ID and VDS(VDS > 0) and sketch your result, if VB = VT/2. ( 5 points) (b) Find the relation between ID and VDS(VDS > 0) and sketch your result, if VB = 2VT. ( 5 points)