Question

Notify Me Bookmark

Suppose in Fig. 7.68, ID = 0.5 mA, λ = 0, and Vb = 1 V. Determine the values of W/L and RD for an input impedance of 50 Ω and maximum voltage gain (while M 1 ​ remains in saturation).

Suppose in Fig. 7.68, ID = 0.5 mA, λ = 0, and Vb = 1 V. Determine the values of W/L and RD for an input impedance of 50 Ω and maximum voltage gain (while M 1 ​ remains in saturation).

Image text
Suppose in Fig. 7.68, ID = 0.5 mA, λ = 0, and Vb = 1 V. Determine the values of W/L and RD for an input impedance of 50 Ω and maximum voltage gain (while M 1 ​ remains in saturation).

Detailed Answer

1 0

Please enter your email here. You will get email when this question is answered by our tutor.

Answer
Doubtrix Logo

This Problem has been solved!

You'll get a detailed, step-by-step and expert verified solution.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up
  • Student Reviews:
  • (1)

Similar/Related Questions

For the circuit given below, ID = 0.5 mA and Vb = 1 V. MOSFET parameters are VTN = 0.6 V, lambda_n = 0, kn' = unCox = 1.25 mA/V2. a) Determine the values of (W/L) and RD for an input impedance of 50 ohm, b) Calculate maximum voltage gain (while M1 remains in saturation).
Solution
0 0

We wish to design the MOS cascode of Fig. 11.95 for an input pole of 5 GHz and an output pole of 10 GHz. Assume M1 and M2 are identical, ID = 0.5 mA, CGS = (2/3)WLCox, Cox = 12 fF/µm2, µnCox = 100 µA/V2, λ = 0, L = 0.18 µm, and CGD = C0W, where C0 = 0.2 fF/µm denotes the gate-drain capacitance per unit width. Determine the maximum allowable values of RG, RD, and the voltage gain. Use Miller’s approximation for CGD1. Assume an overdrive voltage of 200 mV for each transistor.
Solution
0 0

77. Consider the CS stage shown in Fig. 7.99, where M2 operates as a resistor. Figure 7.99 (a) Determine W2 such that an input dc level of 0.8 V yields an output dc level of 1 V. What is the voltage gain under these conditions? (b) What is the change in the gain if the mobility of the NMOS device varies by ±10% ? Can you explain this result using the expressions derived in Chapter 6 for the transconductance? In the following problems, unless otherwise stated, assume μnCox = 200 μA/V2, μpCox = 100 μA/V2, λ = 0, and VTH = 0.4 V for NMOS devices and −0.4 V for PMOS devices.

Solution
0 0