Tests with a n channel FET show that it has the iD vs vGS characteristic shown below with V1 = 2.95 V and I1 = 27.1 mA. When vGS = +V1, iD = I1. When vGS = −V1, iD = 0 mA. a. What is the value of ID0 for this FET? (Give your answer to 3 s. f. ) b. What is the value of gm for this FET? Number Units (Give your answer to 3 s. f. Hint: the units for gm are the same as for conductance.)

Tests with a n channel FET show that it has the iD vs vGS characteristic shown below with V1 = 2.95 V and I1 = 27.1 mA. When vGS = +V1, iD = I1. When vGS = −V1, iD = 0 mA. a. What is the value of ID0 for this FET? (Give your answer to 3 s. f. ) b. What is the value of gm for this FET? Number Units (Give your answer to 3 s. f. Hint: the units for gm are the same as for conductance.)

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Tests with a n channel FET show that it has the i D vs v G S characteristic shown below with V 1 = 2.95 V and I 1 = 27.1 m A . When v G S = + V 1 , i D = I 1 . When v G S = V 1 , i D = 0 m A . a. What is the value of I D 0 for this FET? 0.0136 A (Give your answer to 3 s.f. ) b. What is the value of g m for this FET? Number Units (Give your answer to 3 s.f. Hint: the units for g m are the same as for conductance.)

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