Question

Notify Me Bookmark

The 2 input CMOS gate shown on the left implements the Boolean expression: C = A + B. On the right, this gate design has been modified by adding a PMOS and an NMOS transistor to the A input. a. Fill in the truth table so that it correctly represents this new logic circuit. b. Find the Boolean expression for C for the circuit on the right and enter it in the box.

The 2 input CMOS gate shown on the left implements the Boolean expression: C = A + B. On the right, this gate design has been modified by adding a PMOS and an NMOS transistor to the A input. a. Fill in the truth table so that it correctly represents this new logic circuit. b. Find the Boolean expression for C for the circuit on the right and enter it in the box.

Image text
The 2 input CMOS gate shown on the left implements the Boolean expression: C = A + B ¯ . On the right, this gate design has been modified by adding a PMOS and an NMOS transistor to the A input. a. Fill in the truth table so that it correctly represents this new logic circuit.
b. Find the Boolean expression for C for the circuit on the right and enter it in the box.

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

Describe the difference between NMOS and PMOS. Find a logic equation for 1 bit adder circuit; Out = A + B. Find logic equation of a given truth table, and draw logic circuit. Construct a CMOS circuit to implement the above logic equation and describe operation of your circuit. When input A is at Vdd, input B is at supply voltage (Vdd), and input C is at GND, which transistors are ON, which ones are OFF, and what is output voltage of your circuit). According to your answer in question 2, what input combination has the fastest and slowest delay.

Solution
0 0

Vtn = 0.8 V, Vtp = -0.9 V, a) Find the logic expression for Z. What function does this circuit implement? b) Draw the pull-up network that completes the CMOS logic circuit. c) Assume that the equivalent inverter has an NMOS transistor with a minimum size of 2 um/250 nm. Determine the equivalent PMOS transistor dimensions (W/L) that ensure tPHL = tPLH for the equivalent inverter. d) Find the NMOS and PMOS transistor dimensions in the CMOS logic circuit so that the propagation delays are equal to the value you found for the inverter in c) for the worst case, assuming an equal load capacitance for both the inverter and the logic circuit. Vtn = 0.8 V, Vtp = -0.9 V, unCox = 250 uA/V2, upCox = 120 uA/V2 is given. The pull-down section of a CMOS logic circuit is shown below. = 250 a) Find the logic expression for Z. What function does this circuit implement? b) Draw the pull-up network that completes the CMOS logic circuit. c) Assume that the equivalent inverter has an NMOS transistor with a minimum size of 2 um/250 nm. Determine the equivalent PMOS transistor dimensions (W/L) that ensure tPHL = tPLH for the equivalent inverter. d) Find the NMOS and PMOS transistor dimensions in the CMOS logic circuit so that the propagation delays are equal to the value you found for the inverter in c) for the worst case, assuming an equal load capacitance for both the inverter and the logic circuit. Vtn = 0.8 V, Vtp = -0.9 V, unCox = 250 uA/V2, upCox = 120 uA/V2 is given. The pull-down section of a CMOS logic circuit is shown below., a) Find the logic expression for Z. What function does this circuit implement? b) Draw the pull-up network that completes the CMOS logic circuit. c) Assume that the equivalent inverter has an NMOS transistor with a minimum size of 2 um/250 nm. Determine the equivalent PMOS transistor dimensions (W/L) that ensure tPHL = tPLH for the equivalent inverter. d) Find the NMOS and PMOS transistor dimensions in the CMOS logic circuit so that the propagation delays are equal to the value you found for the inverter in c) for the worst case, assuming an equal load capacitance for both the inverter and the logic circuit. Vtn = 0.8 V, Vtp = -0.9 V, unCox = 250 uA/V2, upCox = 120 uA/V2 is given. The pull-down section of a CMOS logic circuit is shown below. =120 a) Find the logic expression for Z. What function does this circuit implement? b) Draw the pull-up network that completes the CMOS logic circuit. c) Assume that the equivalent inverter has an NMOS transistor with a minimum size of 2 um/250 nm. Determine the equivalent PMOS transistor dimensions (W/L) that ensure tPHL = tPLH for the equivalent inverter. d) Find the NMOS and PMOS transistor dimensions in the CMOS logic circuit so that the propagation delays are equal to the value you found for the inverter in c) for the worst case, assuming an equal load capacitance for both the inverter and the logic circuit. Vtn = 0.8 V, Vtp = -0.9 V, unCox = 250 uA/V2, upCox = 120 uA/V2 is given. The pull-down section of a CMOS logic circuit is shown below. is given. The pull-down section of a CMOS logic circuit is shown below.

a) Find the logic expression for Z. What function does this circuit implement?

b) Draw the pull-up network that completes the CMOS logic circuit.

c) Assume that the equivalent inverter has an NMOS transistor with a minimum size of 2 müm/250 nm. Determine the equivalent PMOS transistor dimensions (W/L) that ensure a) Find the logic expression for Z. What function does this circuit implement? b) Draw the pull-up network that completes the CMOS logic circuit. c) Assume that the equivalent inverter has an NMOS transistor with a minimum size of 2 um/250 nm. Determine the equivalent PMOS transistor dimensions (W/L) that ensure tPHL = tPLH for the equivalent inverter. d) Find the NMOS and PMOS transistor dimensions in the CMOS logic circuit so that the propagation delays are equal to the value you found for the inverter in c) for the worst case, assuming an equal load capacitance for both the inverter and the logic circuit. Vtn = 0.8 V, Vtp = -0.9 V, unCox = 250 uA/V2, upCox = 120 uA/V2 is given. The pull-down section of a CMOS logic circuit is shown below. for the equivalent inverter.

d) Find the NMOS and PMOS transistor dimensions in the CMOS logic circuit so that the propagation delays are equal to the value you found for the inverter in c) for the worst case, assuming an equal load capacitance for both the inverter and the logic circuit.

a) Find the logic expression for Z. What function does this circuit implement? b) Draw the pull-up network that completes the CMOS logic circuit. c) Assume that the equivalent inverter has an NMOS transistor with a minimum size of 2 um/250 nm. Determine the equivalent PMOS transistor dimensions (W/L) that ensure tPHL = tPLH for the equivalent inverter. d) Find the NMOS and PMOS transistor dimensions in the CMOS logic circuit so that the propagation delays are equal to the value you found for the inverter in c) for the worst case, assuming an equal load capacitance for both the inverter and the logic circuit. Vtn = 0.8 V, Vtp = -0.9 V, unCox = 250 uA/V2, upCox = 120 uA/V2 is given. The pull-down section of a CMOS logic circuit is shown below.
Solution
0 0

P R O B LEM II. 6 a) Express F¯ in a simplified sum-of-products form given that F = AB¯+CD¯. b) Implement the logic function F = AB¯+CD¯ with an NMOS digital logic circuit that obeys the static discipline defined by the low-level and high-level logic thresholds VIL = VOL = VL and VIH = VOH = VH, respectively. Assume the supply voltage is VS, and that the on-state resistance of the NMOS transistors is RON. Determine the lowest value of the pull-up resistor RPU for which the circuit will obey the static discipline in terms of RON, VS, VL, and VH; not all variables need appear in your answer. c) Implement the logic function F = AB¯+CD¯ with a CMOS digital logic circuit. (Hint: make use of the result from part (a). ) d) Suppose that the NMOS and CMOS circuits above drive a capacitance CL. Assume that the on-state resistance of both the PMOS and NMOS transistors is RON. For both the NMOS and CMOS circuits determine the worst-case output rise time. For the purpose of this problem, assume that the worst-case output rise time is the time the output takes to go from 0 V to VH. Sketch the form of the output for both the NMOS and the CMOS circuit. e) Suppose that the inputs are arranged such that B = 1, C = 0, and D = 1, and that a 0−V to 5−V square-wave signal is applied to the input A. Assume the square wave cycle time is T, and that T is large enough so that the output comes close to its steady state value for both falling and rising transitions. Under these conditions, compute the power consumed by the CMOS and NMOS circuits when driving the capacitance CL load.
Solution
0 0