Question

Notify Me Bookmark

The below curve shows a C-V characteristics for a silicon MOS capacitor. What is the oxide capacitance value per unit area? On the curve above, sketch the high frequency curve for this MOS capacitor. Please explain why this happens. (4 points)

The below curve shows a C-V characteristics for a silicon MOS capacitor. What is the oxide capacitance value per unit area? On the curve above, sketch the high frequency curve for this MOS capacitor. Please explain why this happens. (4 points)

Image text
The below curve shows a C-V characteristics for a silicon MOS capacitor.
  1. What is the oxide capacitance value per unit area?
  2. On the curve above, sketch the high frequency curve for this MOS capacitor. Please explain why this happens. (4 points)

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

Consider the C-V characteristic below for a silicon MOS capacitor. (a) Is the semiconductor p-type or n-type? (2 pts) (b) Is this a low frequency or high frequency measurement? (2 pts) (c) What is the threshold voltage of this device? (2 pts) (d) What would happen to the capacitance in region 1 if the oxide thickness x0 is increased? Increase, decrease, or stay the same? (2 pts)
Solution
0 0

Problem 1: Consider a silicon MOS capacitor with a C-V characteristic as shown below. The gate insulator is SiO2. The measured maximum and minimum capacitance values are Cmax = 1.2×10−2 F/m2 and Cmin = 9.5×10−4 F/m2. Assume T = 300 K. (a) Is this C-V characteristic measured at low frequency or high frequency? (10 points) (b) What is the thickness of the SiO2 gate insulator? (10 points) (c) What is the depletion layer capacitance at the onset of inversion? (10 points) (d) What is the doping density of silicon in this MOS capacitor? (10 points)
Solution
0 0

Consider the C−V characteristic below for a silicon MOS capacitor. I. (5 pts) Consider the bias points 1, 2, 3, 4, 5 shown on the C-V curve. Complete the following table. II. (1 pts) Is this an n-channel or p-channel device? n-channel or p-channel III. (2 pts) Is this high or low frequency measurement? High frequency or Low frequency IV. (2 pts) What is the threshold voltage for this device? V. (2 pts) When an MOS capacitor is biased into inversion, the source of the inversion layer charge is, a. The contact to substrate b. Leakage current from the gate c. Generation in or within a diffusion length of the depletion region a. Depletion of the majority carriers leaves behind minority carriers in the inversion region
Solution
0 0