The BJT in the following circuit is a 2N2222 p-n-p BJT. The transistor has the following characteristics: β = 160 VBEon = 0.73 V r0 = 200 kΩ Cμ = 7.3 pF Cπ = 22 pF Analyze the circuit and determine the mid-band gain of the system and the corner frequencies. Verify the analysis with a LTSpice simulation.
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The BJT in the following circuit is a 2N2222 p-n-p BJT. The transistor has the following characteristics: β = 160 VBEon = 0.73 V r0 = 200 kΩ Cμ = 7.3 pF Cπ = 22 pF Analyze the circuit and determine the mid-band gain of the system and the corner frequencies. Verify the analysis with a LTSpice simulation.
![The following circuit is a common drain amplifier with a p-channel MOSFET. Design this source follower circuit to have a bias current of ISD = 2.5 mA, an output voltage of VO = 10 V with zero input. Determine the values for R1, R2, and RS. (20 points) Given VDD = 20 V, Ri = 4 kΩ and Rin = 200 kΩ. The p-channel transistor has the following characteristics VTH = −2 V, K = 0.8 mA/V2 and λ = 0. Useful formulae: for p-channel MOSFET iSD = K[(vSG−|vTH|)vSD − 12 vsD2] triode region iSD = 12 K(vSG − |VTH|)2(1+λvSD) saturation region](https://www.doubtrix.com/uploads/editor/2060530213mbrvSxcvjH.jpg)
