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The C-V characteristic curve of an MOS capacitor is shown in the figure below. The area of the device is 1×10−3 cm2. The metal-semiconductor work function difference is ϕms = −0.50 Volts, the oxide is SiO2, the semiconductor is silicon and the semiconductor doping concentration is 3×1016 cm−3. Calculate the oxide thickness

The C-V characteristic curve of an MOS capacitor is shown in the figure below. The area of the device is 1×10−3 cm2. The metal-semiconductor work function difference is ϕms = −0.50 Volts, the oxide is SiO2, the semiconductor is silicon and the semiconductor doping concentration is 3×1016 cm−3. Calculate the oxide thickness

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The C-V characteristic curve of an MOS capacitor is shown in the figure below. The area of the device is 1 × 10 − 3 c m 2 . The metal-semiconductor work function difference is ϕ m s = − 0.50 Volts, the oxide is S i O 2 , the semiconductor is silicon and the semiconductor doping concentration is 3 × 10 16 c m − 3 .
Calculate the oxide thickness

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