The capacitance vs. gate voltage characteristic of a simple MOS capacitor of area 100 μm×100 μm is as shown: Assume that there are no oxide charges. a) What is the thickness of the gate oxide (SiO2) ? b) Estimate the values of VFB and VT. c) Is the gate material metal or n+ poly-Si? How do you know this? d) Is the substrate lightly doped ( < 1018 cm−3) ? How do you know this?

The capacitance vs. gate voltage characteristic of a simple MOS capacitor of area 100 μm×100 μm is as shown: Assume that there are no oxide charges. a) What is the thickness of the gate oxide (SiO2) ? b) Estimate the values of VFB and VT. c) Is the gate material metal or n+ poly-Si? How do you know this? d) Is the substrate lightly doped ( < 1018 cm−3) ? How do you know this?

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The capacitance v s . gate voltage characteristic of a simple MOS capacitor of area 100 μ m × 100 μ m is as shown:
Assume that there are no oxide charges. a) What is the thickness of the gate oxide ( S i O 2 ) ? b) Estimate the values of V F B and V T . c) Is the gate material metal or n + poly-Si? How do you know this? d) Is the substrate lightly doped ( < 10 18 c m 3 ) ? How do you know this?

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