The capacitance vs. gate voltage characteristic of a simple MOS capacitor of area 100 μm×100 μm is as shown: Assume that there are no oxide charges. a) What is the thickness of the gate oxide (SiO2) ? b) Estimate the values of VFB and VT. c) Is the gate material metal or n+ poly-Si? How do you know this? d) Is the substrate lightly doped ( < 1018 cm−3) ? How do you know this?