The capacitance vs. gate voltage characteristic of a simple MOS capaci

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The capacitance vs. gate voltage characteristic of a simple MOS capacitor of area 100 um×100 um is as shown: Assume that there are no oxide charges. a) What is the thickness of the gate oxide (SiO2)? b) Indicate the device is NMOS or PMOS and the values of VFB and VT. c) Is the gate material metal or poly-Si? How do you know this? d) Is the substrate lightly doped ( < 1018 cm−3) ? How do you know this?

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The capacitance

v s

. gate voltage characteristic of a simple MOS capacitor of area

100 u m \times 100

um is as shown:

Assume that there are no oxide charges. a) What is the thickness of the gate oxide

({S i O}_{2})

? b) Indicate the device is NMOS or PMOS and the values of

V_{F B}

and

V_{T}

. c) Is the gate material metal or poly-Si? How do you know this? d) Is the substrate lightly doped

(< 10^{18} {c m}^{- 3})

? How do you know this?

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