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The circuit configuration shown below is commonly used for measuring n-channel MOSFET parameters. You are given the MOSFET parameters λ = 0 V−1 L = 1 μm W = 1 μm Use the accompanying graph (note: it is the square root of drain current vs. gate voltage) to A. (10 pts) estimate the threshold voltage of the n-channel MOSFET; B. (10 pts) calculate the transconductance parameter, kn'.

The circuit configuration shown below is commonly used for measuring n-channel MOSFET parameters. You are given the MOSFET parameters λ = 0 V−1 L = 1 μm W = 1 μm Use the accompanying graph (note: it is the square root of drain current vs. gate voltage) to A. (10 pts) estimate the threshold voltage of the n-channel MOSFET; B. (10 pts) calculate the transconductance parameter, kn'.

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The circuit configuration shown below is commonly used for measuring n -channel MOSFET parameters. You are given the MOSFET parameters
λ = 0 V − 1 L = 1 μ m W = 1 μ m
Use the accompanying graph (note: it is the square root of drain current vs. gate voltage) to A. (10 pts) estimate the threshold voltage of the n-channel MOSFET; B. (10 pts) calculate the transconductance parameter, k n '.

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Consider the circuit configuration shown below, which is commonly used for measuring n-channel MOSFET parameters. The transistor's length and width are 1 μm. The accompanying graph plots the transistor's square root of drain current vs. gate voltage, VG. a) Estimate the threshold voltage of the n-channel MOSFET. b) When VG is between 1.5 V and 2.5 V, in what region is the device operating? Consider the p-channel MOSFET amplifier given to the right. ID = 12 kp(VSG − |Vtp|)2, VDD = 5 V, RL = 2 kΩ, kp = 1 mA/V2, Vtp = −1 V c) Derive an expression for the transistor bias point, VGQ, as a function of VDD, Ra, and Rb. d) Determine the required ratio Ra/Rb such that the MOSFET current, ID = 0.5 mA e) What is the voltage bias point of the output VoutQ? Use the value(s) from part d. Please show all steps. A_ = 0.5 VB = Saturation C = VoD(Rb/(Ra+Rb))D = Ra/Rb = 2/3 E = 1 V)

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