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The circuit in Fig. 4 is a common-source amplifier and the parameters are given as μnCox = 250 μA/V2, VT = 0.6 V and VDD = 1.8 V. It is required that the input DC voltage is 0.8 V. (a) For (W/L)1 = 10, what is the maximum voltage gain available (all transistors are in saturation) and what is the value of (W/L)2? [10%] (b) If the dc power is 90 μW, find (W/L)1 and (W/L)2 to obtain a voltage gain of -2? [10%] Fig. 4

The circuit in Fig. 4 is a common-source amplifier and the parameters are given as μnCox = 250 μA/V2, VT = 0.6 V and VDD = 1.8 V. It is required that the input DC voltage is 0.8 V. (a) For (W/L)1 = 10, what is the maximum voltage gain available (all transistors are in saturation) and what is the value of (W/L)2? [10%] (b) If the dc power is 90 μW, find (W/L)1 and (W/L)2 to obtain a voltage gain of -2? [10%] Fig. 4

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  1. The circuit in Fig. 4 is a common-source amplifier and the parameters are given as μ n C o x = 250 μ A / V 2 , V T = 0.6 V and V D D = 1.8 V . It is required that the input D C voltage is 0.8 V . (a) For ( W / L ) 1 = 10 , what is the maximum voltage gain available (all transistors are in saturation) and what is the value of ( W / L ) 2 ? [10%] (b) If the dc power is 90 μ W , find ( W / L ) 1 and ( W / L ) 2 to obtain a voltage gain of -2 ? [10%] Fig. 4

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For this problem, neglect capacitances and ro in transistors and use long-channel equations. M1 is operated with Vov = 0.6 V. The amplifier is intended to be used with a source resistance RS = 50 Ω. (a) Calculate (W/L)1 for an input impedance equal to 50 Ω. What is the required ID1? (b) If (W/L)2 = (W/L)3 what is the required value if I bias ? (c) Calculate R for a voltage gain vo/vi = 10 (d) Symbolically, calculate the NF considering the contribution of M1, M2 and R. (e) To reduce noise figure, is it better to use a high or a low overdrive in M2 and M3? Explain why. (f) If |Vov2| = 1 V, calculate (W/L)2, the DC component at vo and F in dB. CMOS process data: VDD = 1.8 V. For NMOS, Vthn = 0.4 V, μn = 400 cm2/Vs, Cox = 9 fF/μm2 and γn = 1. The parameters for PMOS transistors are k′ = μpCox = 90 μA/V2, Vthp = −0.4 V and γp = 0.8.
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