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The circuit in the figure below has a PMOS transistor with parameters kn = 120×10−6 V/A2, VT = 0.9 V, W/L = 7 μm/0.5 μm. Channel length modulation is neglected. Simulation model of the PMOS device is given at the end of the question. a. Calculate the values of Vout for Vin values varying from 5 V to 0 V (with steps of 1 V). Note the operating region of the PMOS device in each step.

The circuit in the figure below has a PMOS transistor with parameters kn = 120×10−6 V/A2, VT = 0.9 V, W/L = 7 μm/0.5 μm. Channel length modulation is neglected. Simulation model of the PMOS device is given at the end of the question. a. Calculate the values of Vout for Vin values varying from 5 V to 0 V (with steps of 1 V). Note the operating region of the PMOS device in each step.

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The circuit in the figure below has a PMOS transistor with parameters k n = 120 × 10 − 6 V / A 2 , V T = 0.9 V , W / L = 7 μ m / 0.5 μ m . Channel length modulation is neglected. Simulation model of the PMOS device is given at the end of the question. a. Calculate the values of V out for V in values varying from 5 V to 0 V (with steps of 1 V). Note the operating region of the PMOS device in each step.

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The circuit in the figure below has a PMOS transistor with parameters kn = 120 × 10 −6 V/A2, VT = 0.9 V, W/L = 7 μm/0.5 μm. Channel length modulation is neglected. Simulation model of the PMOS device is given at the end of the question. a. Calculate the values of Vout for Vin values varying from 5 V to 0 V (with steps of 1 V). Note the operating region of the PMOS device in each step.

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A resistively loaded PMOS inverter circuit is shown in figure Q1. The circuit is implemented with the CD4007UBE PMOS. This is essentially the same circuit as the NMOS inverting logic gate you used in Task 3, but with a PMOS transistor instead. The load resistor RD = 6 kΩ, and the supply voltage is VDD = +5 V. The transistor parameters are µpCox = 55 µA/V2, W = 60 µm, L = 10 µm, and Vt,p = -1. For the purposes of this question ignore the channel length modulation effect, i.e. take λ = 0. a) Calculate VOUT as VIN varies from +5 V to 0 V, with 1 V steps, i.e. for 5 V, 4 V, 3 V, 2 V, 1 V and 0 V. b) What is the maximum DC power dissipated by this circuit? Figure Q.1. Resistive load PMOS inverter circuit
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A resistively loaded PMOS inverter circuit is shown in figure Q1. The circuit is implemented with the CD4007 UBE PMOS. This is essentially the same circuit as the NMOS inverting logic gate you used in Task 3, but with a PMOS transistor instead. The load resistor RD = 6 kΩ, and the supply voltage is VDD = +5 V. The transistor parameters are μpCox = 55 μA/V2, W = 60 μm, L = 10 μm, and Vt, p = −1. For the purposes of this question ignore the channel length modulation effect, i. e. take λ = 0. a) Calculate VOUt as VIN varies from +5 V to 0 V, with 1 V steps, i. e. for 5 V, 4 V, 3 V, 2 V, 1 V and 0 V. b) What is the maximum DC power dissipated by this circuit? Figure Q. 1. Resistive load PMOS inverter circuit
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