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The CMOS inverter shown in Figure below has VDD = 1.8 V and is fabricated in a 0.18 μm process for which μn = 4 μp, μnCox = 400 μA/V2, and Vtn = −Vtp = 0.4 V. For this problem, neglect the Early effect. Both QN and QP use the minimum channel length allowed. For QN, W/L = 1.5. Find the width that QP must have in order for the inverter switching to occur at vI = 0.9 V. [15 points] (Hint: As vI = VDD/2, QN and QP are matched)

The CMOS inverter shown in Figure below has VDD = 1.8 V and is fabricated in a 0.18 μm process for which μn = 4 μp, μnCox = 400 μA/V2, and Vtn = −Vtp = 0.4 V. For this problem, neglect the Early effect. Both QN and QP use the minimum channel length allowed. For QN, W/L = 1.5. Find the width that QP must have in order for the inverter switching to occur at vI = 0.9 V. [15 points] (Hint: As vI = VDD/2, QN and QP are matched)

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The CMOS inverter shown in Figure below has V D D = 1.8 V and is fabricated in a 0.18 μ m process for which μ n = 4 μ p , μ n C o x = 400 μ A / V 2 , and V t n = − V t p = 0.4 V . For this problem, neglect the Early effect. Both Q N and Q P use the minimum channel length allowed. For Q N , W / L = 1.5 . Find the width that Q P must have in order for the inverter switching to occur at v I = 0.9 V . [15 points] (Hint: As v I = V D D / 2 , Q N and Q P are matched)

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