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The current in an NMOS transistor is 0.5 mA when VGS - VTN = 0.6 V and 1.0 mA when VGS - VTN = 1.0 V. The device is operating in the nonsaturation region. Determine VDS and Kn.

The current in an NMOS transistor is 0.5 mA when VGS - VTN = 0.6 V and 1.0 mA when VGS - VTN = 1.0 V. The device is operating in the nonsaturation region. Determine VDS and Kn.

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The current in an NMOS transistor is 0.5 mA when VGS - VTN = 0.6 V and 1.0 mA when VGS - VTN = 1.0 V. The device is operating in the nonsaturation region. Determine VDS and Kn.

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Calculate the total charge stored in the channel of an NMOS transistor under the following conditions: CoX =10fF/um2, W=5um, L=0.1um, and VGS -VTH=1 V. Assume VDS =0. An NMOS transistor conducts 1 mA when VGS-VTH=0.6V and 1.6 mA when VGS - VTH =0.8 V. Calculate VDS and W/L if the transistor is operating in the triode region. Determine the operating region of M1 in each of the circuits shown in Figure 1.

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Given (Fig. 1): Ln = 1 μm NMOS Lp = 1 μm PMOS Kn6 = 25 μA/V2 Kp6 = 10 μA/V2 tox = 69 nm, Cox = 5×10−4 pf/μm2 VTN = 1.0 V VTP = −1.0 V a) Determine the width of a NMOS transistor which draws 1.6 mA of current between drain and source when its Vgs = Vds = 5 Volts. (6 points) b) What is the corresponding W of the PMOS device if the gate is to have symmetrical delay characteristics? ( 4 points) c) This NMOS transistor is used as the pull down of an inverter loaded by an interconnect capacitance of 470 pf (Fig. 1). Calculate the time to discharge Vout from 5 Volts to 4.0 Volts, from 4.0 Volts to 0.5 Volts and from 5 Volts to 0.5 Volts. ( 25 points) Vout = 5 V at t = 0 Figure 1

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In the circuit configurations below: a. Identify Drain and Source terminals assuming the device is an NMOS. b. Identify operating region of each transistor (cutoff, saturation, or velocity saturation). c. Determine the drain current Assume VDS at = 1 V, VTN = 0.5 V, and K′n(W/L) = 1 mA/V2. Ignore the body effect. (a) (b) (c) (d) (e) (f) (g)In the circuit configurations below: a. Identify Drain and Source terminals assuming the device is an NMOS. b. Identify operating region of each transistor (cutoff, saturation, or velocity saturation). c. Determine the drain current Assume VDS at = 1 V, VTN = 0.5 V, and K′n(W/L) = 1 mA/V2. Ignore the body effect. (a) (b) (c) (d) (e) (f) (g)
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