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The current Is in the subthreshold conduction Eq. iD = Ise^vGS/nVT is proportional to exp(-Vt/nVT). If the threshold voltage of an NMOS transistor is reduced by 0.1 V, by what factor will the static power dissipation increase? Assume n = 2. Repeat for a reduction in Vt by 0.2 V. What do you conclude about the selection of a value of Vt in process design?

The current Is in the subthreshold conduction Eq. iD = Ise^vGS/nVT is proportional to exp(-Vt/nVT). If the threshold voltage of an NMOS transistor is reduced by 0.1 V, by what factor will the static power dissipation increase? Assume n = 2. Repeat for a reduction in Vt by 0.2 V. What do you conclude about the selection of a value of Vt in process design?

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The current Is in the subthreshold conduction Eq. iD = Ise^vGS/nVT is proportional to exp(-Vt/nVT). If the threshold voltage of an NMOS transistor is reduced by 0.1 V, by what factor will the static power dissipation increase? Assume n = 2. Repeat for a reduction in Vt by 0.2 V. What do you conclude about the selection of a value of Vt in process design?

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The current IS in the subthreshold conduction Eq. (15.13) is proportional to e-Vt/nVT. If the threshold voltage of an NMOS transistor is reduced by 0.1 V, by what factor will the static power dissipation increase? Assume n = 2. Repeat for a reduction in Vt by 0.2 V. What do you conclude about the selection of a value of Vt in process design?

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