The current Is in the subthreshold conduction Eq. iD = Ise^vGS/nVT is proportional to exp(-Vt/nVT). If the threshold voltage of an NMOS transistor is reduced by 0.1 V, by what factor will the static power dissipation increase? Assume n = 2. Repeat for a reduction in Vt by 0.2 V. What do you conclude about the selection of a value of Vt in process design?
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![Q.2(a) An NMOS transistor, operating in the linear region with VDS = 50 mV, is found to conduct 25 μA for VGS = 1 V and 50 μA for VGS = 1.5 V. What is the apparent value of threshold voltage VT? If kn′ = 50 μA/V2, what is the device W/L ratio? What current would you expect to flow with VOS = 2 V and VDS = 0.1 V ? If the device is operated at VGS = 2 V, at what value of VDS will the drain end of the MOSFET channel just reach pinch-off? [4][CO1] (b) Design a CMOS inverter with switching threshold voltage of 2/3VDD. What is the resulting ratio of WP/WN ? (Assume LP = LN, μN = 2.5μP, |VTP| = VTN = 0.2VDD, [4][CO2]](https://www.doubtrix.com/uploads/editor/0592017159IpshciERik.png)