Question

Notify Me Bookmark

The electron concentration in a region of silicon is shown in Fig. P2.44. (a) If the electron mobility is 350 cm2/V•s and the width WB = 0.25 µm, determine the electron diffusion current density. Assume room temperature. (b) Plot the electron velocity for 0 ≤ x ≤ WB.

The electron concentration in a region of silicon is shown in Fig. P2.44. (a) If the electron mobility is 350 cm2/V•s and the width WB = 0.25 µm, determine the electron diffusion current density. Assume room temperature. (b) Plot the electron velocity for 0 ≤ x ≤ WB.

Image text
The electron concentration in a region of silicon is shown in Fig. P2.44. (a) If the electron mobility is 350 cm2/V•s and the width WB = 0.25 µm, determine the electron diffusion current density. Assume room temperature. (b) Plot the electron velocity for 0 ≤ x ≤ WB.

Detailed Answer

2 0

Please enter your email here. You will get email when this question is answered by our tutor.

Answer
Doubtrix Logo

This Problem has been solved!

You'll get a detailed, step-by-step and expert verified solution.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up
  • Student Reviews:
  • (2)
  • Correct answers (2)
  • Complete solution (2)
  • Step-by-step solution (2)
  • Fully explained (2)

Similar/Related Questions

Consider MOSFET-based current source circuits shown below. Assume that the n-type MOSFET transistors follow the long-channel model with μnCox = 100 μA/V2 and Vth,n = 0.5 V. All the transistors have a fixed channel length L = 0.25 μm. The bias voltage VB1 is at 0.8 V. Assume that all transistors have no back-bias effect. (1) (2) (a) For a basic current source in Fig. (1), size the NMOS transistor M1's width ( = W1) so that it conducts a current of 1 mA when it operates in saturation region. You may assume λn = 0. (b) What is the minimum value of Vout for this circuit that keeps M1 in saturation region? (c) For a cascode current source in Fig. (2), assume that the transistor M2 has the same width with M1 you determined from part (a). Determine the value of VB2 that yields the lowest minimum VOUT keeping both M1 and M2 in saturation regions. (d) Now, let's assume that the transistors M1 and M2 have a finite output resistance with λn = 0.1 V−1. Compute the value of the output resistance (Rout) of this cascode current source when M1 and M2 are in the saturation region. (Hint: Calculate the output impedance in a small signal equivalent circuit.)
Solution
0 0

Figure P2.47 gives the electron and hole concentrations in a 2-µm-wide region of silicon. In addition, there is a constant electric field of 25 V/cm present in the sample. What is the total current density at x = 0? What are the individual drift and diffusion components of the hole and electron current densities at x = 1.0 µm? Assume that the electron and hole mobilities are 350 and 150 cm2/V•s, respectively.

Figure P2.47 gives the electron and hole concentrations in a 2-µm-wide region of silicon. In addition, there is a constant electric field of 25 V/cm present in the sample. What is the total current density at x = 0? What are the individual drift and diffusion components of the hole and electron current densities at x = 1.0 µm? Assume that the electron and hole mobilities are 350 and 150 cm2/V•s, respectively.
Solution
2 0

Consider the circuit shown below with a Si n−MOSFET. Given: VDD = 7 V, VG = 2 V and RL = 1.1 KΩ. Consider the MOSFET is operating in the linear region under this biasing condition. If the voltage drop across the drain and source terminals, VDS = 0.4 V and the threshold voltage, VT = 0.5 V. Calculate - (a) The drain current (IDS) and the power dissipated in the MOSFET. (b) 'ON resistance' of the MOSFET. (c) 'Conduction parameter (Kn)' of the MOSFET. (d) Capacitance of the gate oxide (Cox) [in F/cm2]. (e) Thickness of the gate oxide layer (tox) and the transconductance (gm) of the MOSFET. (f) Calculate the sheet electron concentration (ns) in the channel at the source end. Given: Channel length, L = 0.8 μm, Gate Width, W = 20 μm, electron mobility in the channel, μn = 800 cm2/Vs, and dielectric constant of the oxide layer is 3.9.
Solution
1 0