Question

Notify Me Bookmark

The enhancement-load transistor in the NMOS inverter in Figure P16.8 has a separate bias applied to the gate. Assume transistor parameters of Kn = 1 mA/V2 for MD, Kn = 0.4 mA/V2 for ML, and VTN = 1 V for both transistors. Using the appropriate logic 0 and logic 1 input voltages, determine VOH and VOL for: (a) VB = 4 V, (b) VB = 5 V, (c) VB = 6 V, and (d) VB = 7 V.

The enhancement-load transistor in the NMOS inverter in Figure P16.8 has a separate bias applied to the gate. Assume transistor parameters of Kn = 1 mA/V2 for MD, Kn = 0.4 mA/V2 for ML, and VTN = 1 V for both transistors. Using the appropriate logic 0 and logic 1 input voltages, determine VOH and VOL for: (a) VB = 4 V, (b) VB = 5 V, (c) VB = 6 V, and (d) VB = 7 V.

The enhancement-load transistor in the NMOS inverter in Figure P16.8 has a separate bias applied to the gate. Assume transistor parameters of Kn = 1 mA/V2 for MD, Kn = 0.4 mA/V2 for ML, and VTN = 1 V for both transistors. Using the appropriate logic 0 and logic 1 input voltages, determine VOH and VOL for: (a) VB = 4 V, (b) VB = 5 V, (c) VB = 6 V, and (d) VB = 7 V.

Image text
The enhancement-load transistor in the NMOS inverter in Figure P16.8 has a separate bias applied to the gate. Assume transistor parameters of Kn = 1 mA/V2 for MD, Kn = 0.4 mA/V2 for ML, and VTN = 1 V for both transistors. Using the appropriate logic 0 and logic 1 input voltages, determine VOH and VOL for: (a) VB = 4 V, (b) VB = 5 V, (c) VB = 6 V, and (d) VB = 7 V.

Detailed Answer

3 0

Please enter your email here. You will get email when this question is answered by our tutor.

Answer
Doubtrix Logo

This Problem has been solved!

You'll get a detailed, step-by-step and expert verified solution.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up
  • Student Reviews:
  • (3)
  • Correct answers (3)
  • Complete solution (3)
  • Step-by-step solution (3)
  • Fully explained (3)

Similar/Related Questions

16.31 Consider the CMOS inverter in Figure 16.21 biased at VDD = 2.5 V. The transistor parameters are VTN = 0.4 V, VTP = −0.4 V, and Kn = Kp = 100 μA/V2. (a) Find the transition points for the p-channel and n-channel transistors. (b) Sketch the voltage transfer characteristics, including the appropriate voltage values at the transition points. (c) Determine vO for vI = 1.1 V and vI = 1.4 V. Figure P16.21
Solution
0 0

Consider the NMOS inverter with depletion load in Figure 16.7(a). Let VDD = 1.8 V, and assume VTND = 0.3 V and VTNL = -0.6 V. (a) Design the circuit such that the power dissipation is 80μW and the output voltage is vO = 0.06 V when vI is a logic 1. (b) Using the results of part (a), determine the transition points for the driver and load transistors. (c) If (W/L)D found in part (a) is doubled, what is the maximum power dissipation in the inverter and what is vO when vI is a logic 1? The NMOS inverter with depletion load is shown in Figure 16.7(a). The bias is VDD = 2.5 V. The transistor parameters are VTND = 0.5 V and VTNL = -1 V. The width-to-length ratio of the load device is W/L = 1. (a) Design the driver transistor such that vO = 0.05 V when the input is a logic 1. (b) What is the power dissipated in the circuit when vI = 2.5 V?

Consider the NMOS inverter with depletion load in Figure 16.7(a). Let VDD = 1.8 V, and assume VTND = 0.3 V and VTNL = -0.6 V. (a) Design the circuit such that the power dissipation is 80μW and the output voltage is vO = 0.06 V when vI is a logic 1. (b) Using the results of part (a), determine the transition points for the driver and load transistors. (c) If (W/L)D found in part (a) is doubled, what is the maximum power dissipation in the inverter and what is vO when vI is a logic 1? The NMOS inverter with depletion load is shown in Figure 16.7(a). The bias is VDD = 2.5 V. The transistor parameters are VTND = 0.5 V and VTNL = -1 V. The width-to-length ratio of the load device is W/L = 1. (a) Design the driver transistor such that vO = 0.05 V when the input is a logic 1. (b) What is the power dissipated in the circuit when vI = 2.5 V?
Solution
0 0

Figure 3 shows an amplifier with a current mirror as an active load. The MOSFETs have the following parameters: Vtn = −Vtp = 0.6 V, kn′ = 200 μA/V2, kp′ = 65 μA/V2, VA(NMOS) = 20 V, VA(PMOS) = 10 V, VT = 26 mV, R1 = 7 kΩ, R2 = 10 kΩ, L = 0.4 μm and W = 4 μm. The base-emitter forward voltage, VBE, of transistor Q4 is 0.7 V. The forward voltage drop for both D1 and D2 is 0.7 V. The supply voltage, VDD = 3 V. Assume the base current of Q4 is negligible compared to the emitter and collector currents of Q4, with all the transistors biased in the active region. (a) Identify the transistors forming the current mirror. (b) Calculate the value of IREF . (c) Calculate the output resistances of transistors Q1 and Q2.
Solution
0 0