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The following figure is the ID−VD characteristics of a NMOSFET with Tox = 10 nm, W = 8 μm, and L = 2 μm. (Assume m = 1 and ignore velocity saturation. ) (a) Estimate VTH from the plot. (b) Estimate μn in the inversion layer. (c) Add the I−V curve corresponding to VGS = 3 V in the plot above.

The following figure is the ID−VD characteristics of a NMOSFET with Tox = 10 nm, W = 8 μm, and L = 2 μm. (Assume m = 1 and ignore velocity saturation. ) (a) Estimate VTH from the plot. (b) Estimate μn in the inversion layer. (c) Add the I−V curve corresponding to VGS = 3 V in the plot above.

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The following figure is the I D − V D characteristics of a NMOSFET with T 0 x = 10 n m , W = 8 μ m , and L = 2 μ m . (Assume m = 1 and ignore velocity saturation.) (a) Estimate V T H from the plot. (b) Estimate μ n in the inversion layer. (c) Add the I − V curve corresponding to V G S = 3 V in the plot above.

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