The following is a single stage amplifier circuit with an enhancement load. Assume that both transistors has the same W/L ratio and the threshold voltage VTn = 0.2×VDD. a) Provide an accurate sketch of the transfer function, vOUT versus vIN. (12 points) b) Provide an expression for the small signal mid-band gain of this amplifier. (8 points) Useful formulae: for n -channel MOSFET iDS = K[(vGS − VTH)vDS − 12 vDS2] triode region iDS = 12 K(vGS − VTH)2(1 + λvDS) saturation region
![The following is a single stage amplifier circuit with an enhancement load. Assume that both transistors has the same W/L ratio and the threshold voltage VTn = 0.2×VDD. a) Provide an accurate sketch of the transfer function, vOUT versus vIN. (12 points) b) Provide an expression for the small signal mid-band gain of this amplifier. (8 points) Useful formulae: for n -channel MOSFET iDS = K[(vGS − VTH)vDS − 12 vDS2] triode region iDS = 12 K(vGS − VTH)2(1 + λvDS) saturation region](https://www.doubtrix.com/uploads/editor/3974569839tszYWicocN.png)
![The following single stage differential amplifier circuit is designed for a 0.18 μm CMOS technology. Given: VDD = |VSS| = 1.5 V, |VTH| = 0.5 V, L = 0.36 μm (for all transistors), μCox = 4μCox = 400 μA/V2, and λ = 0.2 a) For a bias current of Ibias = 200 μA and over drive voltage |Vov| = 0.2 V for all transistors, determine the W/L ratios for M1, M2, M3, and M4. (10 points) b) Determine the small signal differential gain vdo/vid for this design. (10 points) Useful formulae: for n-channel MOSFET iDS = K[(vGS − VTH)vDS − 12 vDS2] triode region K = K′(WL) = μCox(WL) iDS = 12 K(vGS − VTH)2(1 + λvDS) saturation region where VA = 1 λ, and VA = VA′L, ro = 1 λID Vow = VGS − VTH overdrive voltage](https://www.doubtrix.com/uploads/editor/9810917332GadsOPFElN.png)
![The following circuit is a common drain amplifier with a p-channel MOSFET. Design this source follower circuit to have a bias current of ISD = 2.5 mA, an output voltage of VO = 10 V with zero input. Determine the values for R1, R2, and RS. (20 points) Given VDD = 20 V, Ri = 4 kΩ and Rin = 200 kΩ. The p-channel transistor has the following characteristics VTH = −2 V, K = 0.8 mA/V2 and λ = 0. Useful formulae: for p-channel MOSFET iSD = K[(vSG−|vTH|)vSD − 12 vsD2] triode region iSD = 12 K(vSG − |VTH|)2(1+λvSD) saturation region](https://www.doubtrix.com/uploads/editor/2060530213mbrvSxcvjH.jpg)
![USING MATLAB A MOSFET has three modes of operation: cutoff, triode, and saturation. The triode region is also referred to as the linear or quadratic region. The drain current of the n-channel MOSFET (NMOS) is found from the following set of equations: Cutoff: (VGS < VT) ID = 0 Triode: (VCS > VT and VDS < VGS−VT) ID = k[(VGS − VT)VDS − 12 VDS2] Saturation: (VGS > VT and VDS > = VGS − VT) ID = 12 k(VGS − VT)2 where: k is the transconductance parameter (A/V2) VG is the voltage on the gate (V) VD is the voltage on the drain (V) VS is the voltage on the source (typically zero) (V) VT is the threshold voltage (V) From the NTB5860 NL datasheet, we can find: k = 240 AV2 VT = 2.4 V Plot ID versus VDS on a single graph. a. Use the same values for VGS. b. Adjust the graph so that the scale replicates Figure 1 of the datasheet. c. Label the x and y axes the same as Figure 1 of the datasheet. d. Add text within the figure to label the gate voltages.](https://www.doubtrix.com/uploads/editor/0400258642QsBZoHcjRn.png)