Question

Notify Me Bookmark

The inverter in the circuit below is a symmetric CMOS inverter, with the following parameters: VDD = 5.0 V K = 1/6 mA/V^2 Vt = 2.0 V. Using any valid simplifying approximation, determine the values for V0 and I.

The inverter in the circuit below is a symmetric CMOS inverter, with the following parameters: VDD = 5.0 V K = 1/6 mA/V^2 Vt = 2.0 V. Using any valid simplifying approximation, determine the values for V0 and I.

Image text
The inverter in the circuit below is a symmetric CMOS inverter, with the following parameters: VDD = 5.0 V K = 1/6 mA/V^2 Vt = 2.0 V. Using any valid simplifying approximation, determine the values for V0 and I.

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Answer
Doubtrix Logo

This Problem has been solved!

You'll get a detailed, step-by-step and expert verified solution.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up

Similar/Related Questions

a) Your job is to design the following circuit, using 2 mA of bias current and achieve a gain of at least 3.5 V/V. You realize that you can bias an amplifier using degeneration resistance using the circuit topology shown below. Calculate values for RS to get 2 mA of current, and RL to get the gain you need. For large signal calculations, you may assume lambda = 0. What is the problem with this amplifier? b) You suggest replacing the load resistance RL with a current source that has a very large output impedance, as shown below. The current source requires a headroom of at least 0.5 V. What is the gain of the amplifier? How does this fix the problem from the previous part? 1 Debugging Amplifiers Suppose you are given an NMOS transistor with the following parameters: In addition, VDD = 5 V.

a) Your job is to design the following circuit, using 2 mA of bias current and achieve a gain of at least 3.5 V/V. You realize that you can bias an amplifier using degeneration resistance using the circuit topology shown below. Calculate values for RS to get 2 mA of current, and RL to get the gain you need. For large signal calculations, you may assume lambda = 0. What is the problem with this amplifier? b) You suggest replacing the load resistance RL with a current source that has a very large output impedance, as shown below. The current source requires a headroom of at least 0.5 V. What is the gain of the amplifier? How does this fix the problem from the previous part? 1 Debugging Amplifiers Suppose you are given an NMOS transistor with the following parameters: In addition, VDD = 5 V.

a) Your job is to design the following circuit, using 2 mA of bias current and achieve a gain of at least 3.5 V/V. You realize that you can bias an amplifier using degeneration resistance using the circuit topology shown below. Calculate values for RS to get 2 mA of current, and RL to get the gain you need. For large signal calculations, you may assume lambda = 0. What is the problem with this amplifier? b) You suggest replacing the load resistance RL with a current source that has a very large output impedance, as shown below. The current source requires a headroom of at least 0.5 V. What is the gain of the amplifier? How does this fix the problem from the previous part? 1 Debugging Amplifiers Suppose you are given an NMOS transistor with the following parameters: In addition, VDD = 5 V.
Solution
1 0

Consider a CMOS inverter, with the following device parameters: nMOS VT0,n = 0.6 V unCox = 60 uA/V2 pMOS VT0,p = -0.8 V upCox = 20 uA/V2 Also: VDD = 3 V (a) Determine the (W/L) ratios of the nMOS and the PMOS transistor such that the switching threshold is Vth = 1.5 V. (b) Plot the VTC of the CMOS inverter using SPICE. (c) Determine the VTC of the inverter for lambda = 0.05 V-1 and 0.1 V-1. (d) Discuss how the noise margins are influenced by non-zero lambda, value. Note that transistors with very short channel lengths (manufactured with sub-micron design rules) tend to have larger

Solution
1 0

The circuit shown in Figure 7 is supposed to work as an inverter where it has the following values for its parameters: VDD = 1.8V, lambda_1 = lambda_2 = 0, unCox = 100 uA/V2, upCox = 50 uA/V2, VTH,N=0.4V, VTH,P= -0.5V. (W/L)2 = 3/0.18 1. Assuming that vout,min = 0.1 V when vin = VDD, determine the mode of the transistors M1 and M2. 2. Using the previous results, determine the value of (W/L)1 that will guarantee that vout, min = 0.1 V, when vin = VDD.

The circuit shown in Figure 7 is supposed to work as an inverter where it has the following values for its parameters: VDD = 1.8V, lambda_1 = lambda_2 = 0, unCox = 100 uA/V2, upCox = 50 uA/V2, VTH,N=0.4V, VTH,P= -0.5V. (W/L)2 = 3/0.18 1. Assuming that vout,min = 0.1 V when vin = VDD, determine the mode of the transistors M1 and M2. 2. Using the previous results, determine the value of (W/L)1 that will guarantee that vout, min = 0.1 V, when vin = VDD.

Solution
0 0