The maximum velocity of carriers in silicon is approximately 10^7 cm/s. (a) What is the maximum drift current density that can be supported in a region of p-type silicon with a doping of 5 × 10^17/cm3? (b) Repeat for a region of n-type silicon with a doping of 4 × 10^15/cm3?

The maximum velocity of carriers in silicon is approximately 10^7 cm/s. (a) What is the maximum drift current density that can be supported in a region of p-type silicon with a doping of 5 × 10^17/cm3? (b) Repeat for a region of n-type silicon with a doping of 4 × 10^15/cm3?

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The maximum velocity of carriers in silicon is approximately 10^7 cm/s. (a) What is the maximum drift current density that can be supported in a region of p-type silicon with a doping of 5 × 10^17/cm3? (b) Repeat for a region of n-type silicon with a doping of 4 × 10^15/cm3?

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