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The measured characteristics of an n-channel MOSFET, biased in saturation, are shown below. If W/L = 10 and tox = 42.5 nm, determine the following: a) the threshold voltage, VT b) the average electron mobility in the channel, un c) the transconductance, gmSat, at Vgs = 1 and 3 volts.

The measured characteristics of an n-channel MOSFET, biased in saturation, are shown below. If W/L = 10 and tox = 42.5 nm, determine the following: a) the threshold voltage, VT b) the average electron mobility in the channel, un c) the transconductance, gmSat, at Vgs = 1 and 3 volts.

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The measured characteristics of an n-channel MOSFET, biased in saturation, are shown below. If W/L = 10 and tox = 42.5 nm, determine the following: a) the threshold voltage, VT b) the average electron mobility in the channel, un c) the transconductance, gmSat, at Vgs = 1 and 3 volts.

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