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The MOSFET of Fig. 4-18 is characterized by VT = 4 V and ID( on ) = 10 mA. Let iG≈0, R1 = 0.4 MΩ, R2 = 5 kΩ, RS = 0, RD = 2 kΩ, and VDD = 20 V. (a) Find the exact change in IDQ when the MOSFET is replaced with a new device characterized by VT = 3.8 V and ID(on) = 9 mA. (b) Find the change in IDQ predicted by sensitivity analysis when the original device is replaced as in part a.

The MOSFET of Fig. 4-18 is characterized by VT = 4 V and ID( on ) = 10 mA. Let iG≈0, R1 = 0.4 MΩ, R2 = 5 kΩ, RS = 0, RD = 2 kΩ, and VDD = 20 V. (a) Find the exact change in IDQ when the MOSFET is replaced with a new device characterized by VT = 3.8 V and ID(on) = 9 mA. (b) Find the change in IDQ predicted by sensitivity analysis when the original device is replaced as in part a.

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The MOSFET of Fig. 4-18 is characterized by V T = 4 V and I D ( on ) = 10 m A . Let i G ≈ 0 , R 1 = 0.4 M Ω , R 2 = 5 k Ω , R S = 0 , R D = 2 k Ω , and V D D = 20 V . (a) Find the exact change in I D Q when the MOSFET is replaced with a new device characterized by V T = 3.8 V and I D ( o n ) = 9 m A . (b) Find the change in I D Q predicted by sensitivity analysis when the original device is replaced as in part a .

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