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The MOSFET shown in Figure 4 is specified to have Vt=1 V and kn'(W/L)=1mA/V^2 . Assume lambda = 0. Use a power supply VDD =15 V. a) It is required to design the circuit of Figure 4 (by determining values of resistors) to establish a dc drain current ID=0.5 mA. b) Calculate the percentage change in the value of ID obtained when the MOSFET is replaced with another unit having the same kn'(W/L) but Vt=1.5 V.

The MOSFET shown in Figure 4 is specified to have Vt=1 V and kn'(W/L)=1mA/V^2 . Assume lambda = 0. Use a power supply VDD =15 V. a) It is required to design the circuit of Figure 4 (by determining values of resistors) to establish a dc drain current ID=0.5 mA. b) Calculate the percentage change in the value of ID obtained when the MOSFET is replaced with another unit having the same kn'(W/L) but Vt=1.5 V.

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The MOSFET shown in Figure 4 is specified to have Vt=1 V and kn'(W/L)=1mA/V^2 . Assume lambda = 0. Use a power supply VDD =15 V. a) It is required to design the circuit of Figure 4 (by determining values of resistors) to establish a dc drain current ID=0.5 mA. b) Calculate the percentage change in the value of ID obtained when the MOSFET is replaced with another unit having the same kn'(W/L) but Vt=1.5 V.

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It is required to design the circuit of Fig. 6.48(c) to establish a dc drain current ID = 0.5 mA. The MOSFET is specified to have Vt = 1 V and kn
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The schematic of the basic current mirror that utilizes MOSFETs is shown in Figure 1. Assume that the MOSFETs are identical and ignore the channel modulation effect for current transfer ratio calculations. Use Vtn = 2V, Kn = 150mA/V2, and VA = 50V. (Keep in mind that both Vtn and Kn can vary between transistors. A suggested range for Vtn is 1. 8 to 2. 2V and Kn can range from 120mA/V2 to 180mA/V2 ). Figure 1 - Basic MOSFET Current Mirror. Since the VGS voltages of the MOSFETs are the same, the drain current ID2 is equal to ID1. The source VDD2 ensures that Q2 is in saturation mode. Q2 "mirrors" Q1 and hence the circuit is called current mirror. Design the circuit of Figure 3 to obtain IREF = 80mA. Use VDD1 = 7V and VDD2 = 5V. 1. 1. 1 Calculate the value of VGS required for IREF = 80mA. 1. 1. 2 Calculate the value of R. 1. 1. 3 Determine the values of gm and the output resistance of the current mirror r0.

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Consider the circuit of Fig. 5.24(a). In Example 5.5 it was found that when Vt = 1 V and k’n(W/L) = 1 mA/V2 , the drain current is 0.5 mA and the drain voltage is +7 V. If the transistor is replaced with another having Vt = 1.5 V with k’n(W/L) = 1.5 mA/V2 , find the new values of ID and VD. Comment on how tolerant (or intolerant) the circuit is to changes in device parameters.
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