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The NMOS transistors Q1 and Q2 in Fig. 4 having gm = 1 mA/V are operated in saturation. Ignore the channel-length modulation and body effects for these devices. Assume VDD = 5 V and VSS = -5 V. (a) (10 points) Find the open-circuit voltage gain, vs1/vi, and output resistance Ro1. (b) (10 points) Find the input resistance Ri2 and the voltage gain, vo/vi2. (c) (10 points) Now, if the voltage node vs1 is connected to the node vi2, find the overall voltage gain, vo/vi.

The NMOS transistors Q1 and Q2 in Fig. 4 having gm = 1 mA/V are operated in saturation. Ignore the channel-length modulation and body effects for these devices. Assume VDD = 5 V and VSS = -5 V. (a) (10 points) Find the open-circuit voltage gain, vs1/vi, and output resistance Ro1. (b) (10 points) Find the input resistance Ri2 and the voltage gain, vo/vi2. (c) (10 points) Now, if the voltage node vs1 is connected to the node vi2, find the overall voltage gain, vo/vi.

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The NMOS transistors Q1 and Q2 in Fig. 4 having gm = 1 mA/V are operated in saturation. Ignore the channel-length modulation and body effects for these devices. Assume VDD = 5 V and VSS = -5 V. (a) (10 points) Find the open-circuit voltage gain, vs1/vi, and output resistance Ro1. (b) (10 points) Find the input resistance Ri2 and the voltage gain, vo/vi2. (c) (10 points) Now, if the voltage node vs1 is connected to the node vi2, find the overall voltage gain, vo/vi.

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