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The parameters of the circuit in Figure 4.1 are VDD = 3.3 V and RD = 5 kΩ. The transistor parameters are kn’ = 100 μA/V2, W/L = 40, VTN = 0.4 V, and λ = 0.025 V−1. (a) Find IDQ and VGSQ such that VDSQ = 1.5 V. (b) Determine the small-signal voltage gain.

The parameters of the circuit in Figure 4.1 are VDD = 3.3 V and RD = 5 kΩ. The transistor parameters are kn’ = 100 μA/V2, W/L = 40, VTN = 0.4 V, and λ = 0.025 V−1. (a) Find IDQ and VGSQ such that VDSQ = 1.5 V. (b) Determine the small-signal voltage gain.

The parameters of the circuit in Figure 4.1 are VDD = 3.3 V and RD = 5 kΩ. The transistor parameters are kn’ = 100 μA/V2, W/L = 40, VTN = 0.4 V, and λ = 0.025 V−1. (a) Find IDQ and VGSQ such that VDSQ = 1.5 V. (b) Determine the small-signal voltage gain.

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The parameters of the circuit in Figure 4.1 are VDD = 3.3 V and RD = 5 kΩ. The transistor parameters are kn’ = 100 μA/V2, W/L = 40, VTN = 0.4 V, and λ = 0.025 V−1. (a) Find IDQ and VGSQ such that VDSQ = 1.5 V. (b) Determine the small-signal voltage gain.

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The parameters of the circuit given below are VDD = 3.3 V and RD = 5kΩ. The transistor parameters are kn’ = 100µA/V2, W/L = 40, VTN = 0.4 V and λ = 0.025 V-1 . Assume the transistor is biased in the saturation region. (a) Find IDQ and VGSQ such that VDSQ = 1.5 V (b) Determine the small-signal voltage gain
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