Question

Notify Me Bookmark

The saturation current equation of the MOSFET can be obtained from the linear current equation when The voltage between the drain and source VDS becomes equal to the saturation voltage VDS, Sat. The voltage between the drain and source VDS becomes equal to the threshold voltage VT. The voltage between the drain and source becomes VDS equal to voltage between the gate and source VGS. The voltage between the drain and source VDS becomes equal to (VGS + VT).

The saturation current equation of the MOSFET can be obtained from the linear current equation when The voltage between the drain and source VDS becomes equal to the saturation voltage VDS, Sat. The voltage between the drain and source VDS becomes equal to the threshold voltage VT. The voltage between the drain and source becomes VDS equal to voltage between the gate and source VGS. The voltage between the drain and source VDS becomes equal to (VGS + VT).

Image text
The saturation current equation of the MOSFET can be obtained from the linear current equation when The voltage between the drain and source VDS becomes equal to the saturation voltage VDS,Sat. The voltage between the drain and source VDS becomes equal to the threshold voltage VT. The voltage between the drain and source becomes VDS equal to voltage between the gate and source VGS. The voltage between the drain and source VDS becomes equal to ( VGS + VT).

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

The value of RD of the following circuit has been chosen to establish a drain voltage of 0.1 V. What is the effective resistance between drain and source of the MOSFET of the figure? Assume that, the threshold voltage is 0.6 V, mobility of electrons is 600 cm2/V.s, gate capacitance per unit area is 2.5×10−3 F/m2, channel length and width are 0.8 µm and 4 µm, respectively. Figure for question no. 2
Solution
1 0

P3.2. Consider the long-channel MOS device shown in Figure P3.2. At t = 0, the drain and source are at an initial voltage of 3.3 V. At t = 0+, the current source turns on with a value of 10 μA. On the graph, sketch the voltage at the source and drain nodes as a function of time until a steady-state behavior is reached. Estimate the voltages for the end points of every region of operation on the graph. Also, calculate the slope in every region. The key to this problem is to include the proper capacitances in each region of operation. For this problem, assume that k′ = μnCox = 180 μA/V2, VT0 = 0.6 V, VT = 1.1 V (Assume this is the correct threshold voltage when VBS is not 0 V ), and W = 1.5 μm, L = 1 μm (so the quadratic model can be used here). Use tox = 100Å to compute the gate capacitances. Assume CSB = CDB = 15 fF are fixed junction capacitances. Figure P3.2

Solution
0 0

Figure 1 shows a single stage common source MOSFET amplifier circuit. We wish to design the circuit to meet the following design specifications: Load Resistance: RL = 100 KΩ Input Resistance: Ri > 200 KΩ Mid-band Gain: Gv = Vo/Vi = −50 ± 20% Supply Voltage: +15 Volts Circuit Capacitors: CG = 10μF; CS = 47μF; CD = 10μF Figure 1. Common Source MOSFET Amplifier Pre-lab: (a) Design the amplifier to meet the specifications above by choosing values for resistors R1, R2, RD and RS. Begin your design by choosing an appropriate value for the bias current ID. If ID ≈ 0.3 mA, assume VT ≈ 1.7 V, Kn ≈ 0.02 A/V2 and VA = 100 V(λ = 0.01 V−1). Find the small signal approximation of the input resistance Rin where Rin = R1∥R2 Find the small signal approximation of the output resistance Ro, where Ro is given as Ro = RD∥RL∥ro. The small signal mid-band gain of the amplifier is given by Gv = −gmRo where gm = 2knID = kn(VGS−VT) Once you choose ID the DC biasing of the transistor can be found using simple rules of thumb. The voltage VG should be approximately equal to VDD/3 > VT. For maximum symmetry, VD should be biased at the midpoint between VD(Max) and VD(Min). Clearly, the maximum VD is VDD and the minimum VD > VG−Vt. For example, if Vt = 1.7 V and VG = 1/3VDD = 5 V, then VD ≈ 9 V for maximum symmetry.

Figure 1 shows a single stage common source MOSFET amplifier circuit. We wish to design the circuit to meet the following design specifications: Load Resistance: RL = 100 KΩ Input Resistance: Ri > 200 KΩ Mid-band Gain: Gv = Vo/Vi = −50 ± 20% Supply Voltage: +15 Volts Circuit Capacitors: CG = 10μF; CS = 47μF; CD = 10μF Figure 1. Common Source MOSFET Amplifier Pre-lab: (a) Design the amplifier to meet the specifications above by choosing values for resistors R1, R2, RD and RS. Begin your design by choosing an appropriate value for the bias current ID. If ID ≈ 0.3 mA, assume VT ≈ 1.7 V, Kn ≈ 0.02 A/V2 and VA = 100 V(λ = 0.01 V−1). Find the small signal approximation of the input resistance Rin where Rin = R1∥R2 Find the small signal approximation of the output resistance Ro, where Ro is given as Ro = RD∥RL∥ro. The small signal mid-band gain of the amplifier is given by Gv = −gmRo where gm = 2knID = kn(VGS−VT) Once you choose ID the DC biasing of the transistor can be found using simple rules of thumb. The voltage VG should be approximately equal to VDD/3 > VT. For maximum symmetry, VD should be biased at the midpoint between VD(Max) and VD(Min). Clearly, the maximum VD is VDD and the minimum VD > VG−Vt. For example, if Vt = 1.7 V and VG = 1/3VDD = 5 V, then VD ≈ 9 V for maximum symmetry.
Solution
1 0