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The sizing of the NMOS and PMOS transistors is shown in the inverter to have similar tpHL and tpLH. A complex gate structure is shown toward the right to produce the logic function F = D+A⋅(B+C). (a) Find the logical values of the inputs that generate the longest tpHL. (b) Find the logical values of the inputs that generate the longest tpLH. (c) Find the sizing of all the transistors to have the same propagation delays of the given inverter.

The sizing of the NMOS and PMOS transistors is shown in the inverter to have similar tpHL and tpLH. A complex gate structure is shown toward the right to produce the logic function F = D+A⋅(B+C). (a) Find the logical values of the inputs that generate the longest tpHL. (b) Find the logical values of the inputs that generate the longest tpLH. (c) Find the sizing of all the transistors to have the same propagation delays of the given inverter.

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The sizing of the NMOS and PMOS transistors is shown in the inverter to have similar tpHL and tpLH. A complex gate structure is shown toward the right to produce the logic function F = D+A⋅(B+C). (a) Find the logical values of the inputs that generate the longest tpHL. (b) Find the logical values of the inputs that generate the longest tpLH. (c) Find the sizing of all the transistors to have the same propagation delays of the given inverter.

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Similar/Related Questions

Problem 2: The sizing of the NMOS and PMOS transistors is shown in the inverter to have similar tpHL and tpLH. A complex gate structure is shown toward the right to produce the logic function F=D+A.(B+C) (a) Find the logical values of the inputs that generate the longest tpHL. (Points: 5) (b) Find the logical values of the inputs that generate the longest tpLH. (Points: 5) (c) Find the sizing of all the transistors to have the same propagation delays of the given inverter. (Points: 20)

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Let's design CMOS logistic gate F(A, B, C, D) = A+(B∙C)+D For PMOS transistors and NMOS transistors of the same size, consider a fabrication process that is four times the resistance of the PMOS transistor. Assume that all diffusion areas have no sharing. Unit inverter refers to a minimum-sized inverter that makes rise resistance (also called pullup resistance) and fall resistance (also called pulldown resistance) equal by sizing the CMOS inverter shown in the following figure with PMOS:NMOS = 4:1. (a) Draw the transistor-level schematic of CMOS logic gate F consisting of PMOS and NMOS. (b) In the worst case scenario, size the PMOS and NMOS transistors of CMOS logic gate F to have the same rise and fall resistance as unit inverter. (c) Find the logical effect gA and intrinsic delay p of CMOS logic gate F with respect to Input A.
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Implement the logic function F = (A+B)C+D+E¯ in complementary CMOS logic using minimum number of transistors as one complex static gate. It is also given that input C changes the most and input E changes the least. Size the devices so the output resistance is the same as that of a CMOS inverter whose device sizing was done so that the PMOS and NMOS aspect ratio match to have the same tpHL and tpLH For the MOSFETs the device parameters kn′ = 90 μA/V2 and kpp′ = 30 μA/V2
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