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The subthreshold behavior of an NMOS device is specified with Ioff = 100 pA and S = 100 mV/ decade. How much VGS does it need to conduct 10 nA subthreshold current for VDS≫Vth ? (a) 2 V. (b) 10 mV. (c) 100 mV (d) 0. (e) 200 mV. How much is the gate-source capacitance of an NMOS device in saturation for W = 10 μm, L = 0.4 μm ? (a) 30.6 fF. (b) 7.8 fF (c) 22.8 fF. (d) 228 fF. (e) 78 fF.

The subthreshold behavior of an NMOS device is specified with Ioff = 100 pA and S = 100 mV/ decade. How much VGS does it need to conduct 10 nA subthreshold current for VDS≫Vth ? (a) 2 V. (b) 10 mV. (c) 100 mV (d) 0. (e) 200 mV. How much is the gate-source capacitance of an NMOS device in saturation for W = 10 μm, L = 0.4 μm ? (a) 30.6 fF. (b) 7.8 fF (c) 22.8 fF. (d) 228 fF. (e) 78 fF.

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  1. The subthreshold behavior of an NMOS device is specified with I o f f = 100 p A and S = 100 m V / decade. How much V G S does it need to conduct 10 n A subthreshold current for V D S ≫ V t h ? (a) 2 V . (b) 10 m V . (c) 100 m V (d) 0 . (e) 200 m V .
  2. How much is the gate-source capacitance of an NMOS device in saturation for W = 10 μ m , L = 0.4 μ m ? (a) 30.6 f F . (b) 7.8 f F (c) 22.8 f F . (d) 228 f F . (e) 78 f F .

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