The subthreshold leakage current in an NMOS transistor is given by the following expression: iD = ISe^VGS/nVT. The constant value IS in this expression is proportional to e-Vt/nVT (Do not confuse Vt with VT, Vt is the threshold voltage value and V, is the thermal voltage value). Assume n = 2, if the threshold voltage of an NMOS transistor is reduced by 0.1V, by what factor the static power dissipation increase?
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