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The subthreshold leakage current in an NMOS transistor is given by the following expression: iD = ISe^VGS/nVT. The constant value IS in this expression is proportional to e-Vt/nVT (Do not confuse Vt with VT, Vt is the threshold voltage value and V, is the thermal voltage value). Assume n = 2, if the threshold voltage of an NMOS transistor is reduced by 0.1V, by what factor the static power dissipation increase?

The subthreshold leakage current in an NMOS transistor is given by the following expression: iD = ISe^VGS/nVT. The constant value IS in this expression is proportional to e-Vt/nVT (Do not confuse Vt with VT, Vt is the threshold voltage value and V, is the thermal voltage value). Assume n = 2, if the threshold voltage of an NMOS transistor is reduced by 0.1V, by what factor the static power dissipation increase?

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The subthreshold leakage current in an NMOS transistor is given by the following expression: iD = ISe^VGS/nVT. The constant value IS in this expression is proportional to e-Vt/nVT (Do not confuse Vt with VT, Vt is the threshold voltage value and V, is the thermal voltage value). Assume n = 2, if the threshold voltage of an NMOS transistor is reduced by 0.1V, by what factor the static power dissipation increase?

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The current IS in the subthreshold conduction Eq. (15.13) is proportional to e-Vt/nVT. If the threshold voltage of an NMOS transistor is reduced by 0.1 V, by what factor will the static power dissipation increase? Assume n = 2. Repeat for a reduction in Vt by 0.2 V. What do you conclude about the selection of a value of Vt in process design?

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