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The transistor in the circuit below has parameters VTN = 0.8 V and Kn = 0.25 mA/V2. Determine the Q-point considering the MOSFET to be in non-saturation. RD is given as 3 k and VDD is 5 V. Select one: IDQ = 1.42 mA ∣ VDSQ = 0.641 V IDQ = 1.42 mA ∣ VDSQ = 0.741 V IDQ = 2.42 mA ∣ VDSQ = 0.741 V IDQ = 1.91 mA ∣ VDSQ = 0.957 V IDQ = 1.42 mA ∣ VDSQ = −0.741 V

The transistor in the circuit below has parameters VTN = 0.8 V and Kn = 0.25 mA/V2. Determine the Q-point considering the MOSFET to be in non-saturation. RD is given as 3 k and VDD is 5 V. Select one: IDQ = 1.42 mA ∣ VDSQ = 0.641 V IDQ = 1.42 mA ∣ VDSQ = 0.741 V IDQ = 2.42 mA ∣ VDSQ = 0.741 V IDQ = 1.91 mA ∣ VDSQ = 0.957 V IDQ = 1.42 mA ∣ VDSQ = −0.741 V

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The transistor in the circuit below has parameters V T N = 0.8 V and K n = 0.25 m A N N 2 . Determine the Q-point considering the MOSFET to be in non-saturation. R D is given as 3 k and VDD is 5 V .
Select one: I D Q = 1.42 m A ∣ V D S Q = 0.641 V I D Q = 1.42 m A ∣ V D S Q = 0.741 V I D Q = 2.42 m A ∣ V D S Q = 0.741 V I D Q = 1.91 m A ∣ V D S Q = 0.957 V I D Q = 1.42 m A ∣ V D S Q = − 0.741 V

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