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The value of λ for a MOSFET is 0.02 V-1. (a) What is the value of ro at (i) ID = 50 μA and at (ii) ID = 500 μA? (b) If VDS increases by 1 V, what is the percentage increase in ID for the conditions given in part (a)?

The value of λ for a MOSFET is 0.02 V-1. (a) What is the value of ro at (i) ID = 50 μA and at (ii) ID = 500 μA? (b) If VDS increases by 1 V, what is the percentage increase in ID for the conditions given in part (a)?

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The value of λ for a MOSFET is 0.02 V-1. (a) What is the value of ro at (i) ID = 50 μA and at (ii) ID = 500 μA? (b) If VDS increases by 1 V, what is the percentage increase in ID for the conditions given in part (a)?

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D *7.121 The MOSFET in the circuit of Fig. P7.121 has Vt = 0.8 V, kn = 5 mA/V2, and VA = 40 V. (a) Find the values of RS, RD, and RG so that ID = 0.4 mA, the largest possible value for RD is used while a maximum signal swing at the drain of ±0.8 V is possible, and the input resistance at the gate is 10 MΩ. Neglect the Early effect. (b) Find the values of gm and ro at the bias point. (c) If terminal Z is grounded, terminal X is connected to a signal source having a resistance of 1 MΩ, and terminal Y is connected to a load resistance of 10 kΩ, find the voltage gain from signal source to load. (d) If terminal Y is grounded, find the voltage gain from X to Z with Z open-circuited. What is the output resistance of the source follower? Figure P7.121 (e) If terminal X is grounded and terminal Z is connected to a current source delivering a signal current of 50 μA and having a resistance of 100 kΩ, find the voltage signal that can be measured at Y. For simplicity, neglect the effect of ro.D *7.121 The MOSFET in the circuit of Fig. P7.121 has Vt = 0.8 V, kn = 5 mA/V2, and VA = 40 V. (a) Find the values of RS, RD, and RG so that ID = 0.4 mA, the largest possible value for RD is used while a maximum signal swing at the drain of ±0.8 V is possible, and the input resistance at the gate is 10 MΩ. Neglect the Early effect. (b) Find the values of gm and ro at the bias point. (c) If terminal Z is grounded, terminal X is connected to a signal source having a resistance of 1 MΩ, and terminal Y is connected to a load resistance of 10 kΩ, find the voltage gain from signal source to load. (d) If terminal Y is grounded, find the voltage gain from X to Z with Z open-circuited. What is the output resistance of the source follower? Figure P7.121 (e) If terminal X is grounded and terminal Z is connected to a current source delivering a signal current of 50 μA and having a resistance of 100 kΩ, find the voltage signal that can be measured at Y. For simplicity, neglect the effect of ro.
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For all circuits, do not consider channel length modulation for calculating bias points. Unless otherwise specified, channel length modulation effect needs to be considered for small-signal analysis. All answers should be given to the second decimal place. Circuit and device parameters are: Vdd = 5 V;VTn = VTp = 1 V; μnCox = 50 μA/V2; μpCox = 25 μA/V2; λn = λp = 0.01 V−1; Lmin = 1 μm Figure 1 (for problems 1-3) Figure 2 (for problems 5-9) Figure 1: Transistor M1 has (W/L) = (160 μm/2 μm) and a bias current Iout = 2 mA. We desire M1 to be in saturation. You should assume λn = 0 for problems (1)-(3). Determine the ratio R1 /R2 required. 1 point Let VTn increase by 10% to 1.1 V. What is the new value of Iout in mA ? 1 point Let μnCox increase by 10% to 55 μA/V2. What is the new value of Iout in mA ? 1 point Figure 2: The circuit has Iref = 2 mA and Vp = 4 V. Transistors M1, M2 and M3 have (W/L) = (80 μm/1 μm). Determine the value of vx. (in volts) 1 point Determine the minimum allowable value of Vb (in volts) such that all devices are in saturation. 1 point Determine the maximum allowable value of Vb (in volts) such that all devices are in saturation. 1 point Determine Vb (in volts) such that vX = VY. 1 point determine the output resistance of this circuit ∂Vp/∂Iout in MΩ. 1 point Description for questions 9-10: An NMOS device with ID = 1 mA must operate in saturation with drain-source voltages as low as 0.5 V. The minimum required small-signal output impedance is 400 kQ. {Hint: You need to use the relations: rout = 1 /(λ⋅ID); λ⋅L = constant; and expression for VDS, sat = VGS−VT} Determine the length of the device in μm. 1 point Determine the width of the device in μm. 1 point

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For all circuits, do not consider channel length modulation for calculating bias points. Unless otherwise specified, channel length modulation effect needs to be considered for small-signal analysis. All answers should be given to the second decimal place. Circuit and device parameters are: Vdd = 5 V; VTnn = VTp = 1 V; μnCox = 50 μA/V2; μpCox = 25 μA/V2; λn = λp = 0.01 V−1; Lmin = 1 μm Figure 1 (for problems 1-3) Figure 2 (for problems 5-9) Figure 1: Transistor M1 has (W/L) = (160 μm/2 μm) and a bias current Iout = 2 mA. We desire M1 to be in saturation. You should assume λn = 0 for problems (1)-(3). Determine the ratio R1 /R2 required. 1 point Let VTn increase by 10% to 1.1 V. What is the new value of Iout in mA ? 1 point Let μnCox increase by 10% to 55 μA/V2. What is the new value of Iout in mA ? 1 point Figure 2: The circuit has Iref = 2 mA and VP = 4 V. Transistors M1, M2 and M3 have (W/L) = (80 μm/1 μm). Determine the value of vx. (in volts) 1 point Determine the minimum allowable value of Vb (in volts) such that all devices are in saturation. 1 point Determine the maximum allowable value of Vb (in volts) such that all devices are in saturation. 1 point Determine Vb (in volts) such that VX = VY. 1 point determine the output resistance of this circuit ∂Vp/Iout in MQ. 1 point Description for questions 9-10: An NMOS device with ID = 1 mA must operate in saturation with drain-source voltages as low as 0.5 V. The minimum required small-signal output impedance is 400 kΩ. {Hint: You need to use the relations: rout = 1 /(λ⋅ID); λ⋅L = constant; and expression for VDS, sat = VGS−VT }Determine the length of the device in μm. 1 point Determine the width of the device in μm. 1 point

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