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The value of RD of the following circuit has been chosen to establish a drain voltage of 0.1 V. What is the effective resistance between drain and source of the MOSFET of the figure? Assume that, the threshold voltage is 0.6 V, mobility of electrons is 600 cm2/V.s, gate capacitance per unit area is 2.5×10−3 F/m2, channel length and width are 0.8 µm and 4 µm, respectively. Figure for question no. 2

The value of RD of the following circuit has been chosen to establish a drain voltage of 0.1 V. What is the effective resistance between drain and source of the MOSFET of the figure? Assume that, the threshold voltage is 0.6 V, mobility of electrons is 600 cm2/V.s, gate capacitance per unit area is 2.5×10−3 F/m2, channel length and width are 0.8 µm and 4 µm, respectively. Figure for question no. 2

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The value of RD of the following circuit has been chosen to establish a drain voltage of 0.1 V. What is the effective resistance between drain and source of the MOSFET of the figure? Assume that, the threshold voltage is 0.6 V, mobility of electrons is 600 cm2/V.s, gate capacitance per unit area is 2.5×10−3 F/m2, channel length and width are 0.8 µm and 4 µm, respectively. Figure for question no. 2

Explanation & Steps

Operating point of NMOS transistor in terms of VGS and VDS is given. First of all mode of operation of NMOS transistor need to be calculated using VGS and VDS of NMOS transistor.

Then Kirchhoff’s voltage law (KVL) can be used to determine resistance, RD and effective resistance between drain and source terminal rDS.

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