Question

Notify Me Bookmark

To determine the triode and saturation regions, first: Plot the input/output characteristic of the stage shown in Fig. 6 for 0 < Vin < 2.5 V. At what value of Vin do Q1 and Q2 carry equal collector currents? Fig. 6

To determine the triode and saturation regions, first: Plot the input/output characteristic of the stage shown in Fig. 6 for 0 < Vin < 2.5 V. At what value of Vin do Q1 and Q2 carry equal collector currents? Fig. 6

Image text
To determine the triode and saturation regions, first: Plot the input/output characteristic of the stage shown in Fig. 6 for 0 < V i n < 2.5 V . At what value of V i n do Q 1 and Q 2 carry equal collector currents? Fig. 6

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

To determine the triode and saturation regions, first: Plot the input/output characteristic of the circuit illustrated In Fig. 2 for 0 < Vin < 2 V. What value of Vin yields a transconductance of (50 Ω)-1 for Q1? Assume 10-16 A, VA = ∞, T = 300 k. Fig. 2

Solution
0 0

6.7 One Ids − Vds curve of an ideal MOSFET is shown in Fig. 6-43. Note that Idsat = 10 −3 A and Vdsat = 2 V for the given characteristic. (You may or may not need the following information: m = 1, L = 0.5 μm, W = 2.5 μm, TOX = 10 nm. Do not consider velocity saturation.) (a) Given a Vt of 0.5 V, what is the gate voltage Vgs one must apply to obtain the I−V curve? (b) What is the inversion-layer charge per unit area at the drain end of the channel when the MOSFET is biased at point (1) on the curve? (c) Suppose the gate voltage is changed such that Vgs−Vt = 3 V. For the new condition, determine Ids at Vds = 4 V. (d) If Vd = Vs = Vb = 0 V, sketch the general shape of the gate capacitance C vs. Vg to be expected from the MOSFET, when measured at 1 MHz. Do not calculate any capacitance but do label the Vg = Vt point in the C−V curve.
Solution
0 0

For an NMOS differential pair with a common-mode voltage VCM applied, as shown in Fig. 9.2, let VDD = VSS = 1.0 V, kn' = 0.4 mA/V^2, (W/L) 1,2 = 10, Vtn = 0.4 V, I = 0.16 mA, RD = 5kohm, and neglect channel-length modulation. (a) Find VOV and V GS for each transistor. (b) For V CM =0, find VS, ID1, ID2, VD1, VD2, and VO. (c) Repeat (b) for VCM = +0.4 V. (d) Repeat (b) for VCM = -0.1 V (e) What is the highest value of VCM for which Q1 and Q2 remain in saturation? (f) If current source I requires a minimum voltage of 0.2 V to operate properly, what is the lowest value allowed for VS and hence for VCM (g) What is the input common-mode range?
Solution
7 0