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Use the Elmore delay approximation to find the worst-case rise and fall delays at the output for the following circuit. The gate sizes of the transistors are given in the figure. Use the assumption that the diffusion capacitance is equal to the gate capacitance, and that a minimum sized transistor has gate and diffusion capacitance equal to C. The resistance of an nMOS transistor with unit width is R and the resistance of a pMOS transistor with width 2 is also R. Also assume NO sharing of diffusion regions. (Hint: off-path capacitances can contribute to delay.)

Use the Elmore delay approximation to find the worst-case rise and fall delays at the output for the following circuit. The gate sizes of the transistors are given in the figure. Use the assumption that the diffusion capacitance is equal to the gate capacitance, and that a minimum sized transistor has gate and diffusion capacitance equal to C. The resistance of an nMOS transistor with unit width is R and the resistance of a pMOS transistor with width 2 is also R. Also assume NO sharing of diffusion regions. (Hint: off-path capacitances can contribute to delay.)

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Use the Elmore delay approximation to find the worst-case rise and fall delays at the output for the following circuit. The gate sizes of the transistors are given in the figure. Use the assumption that the diffusion capacitance is equal to the gate capacitance, and that a minimum sized transistor has gate and diffusion capacitance equal to C. The resistance of an nMOS transistor with unit width is R and the resistance of a pMOS transistor with width 2 is also R. Also assume NO sharing of diffusion regions. (Hint: off-path capacitances can contribute to delay.)

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