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Using the following small signal model for NMOS, please calculate gain A = vout/vin in terms gm, C1, C2, RD, RL, RS and RG. (alpha numeric study) Draw the bode plot for gain and phase vs frequency diagram.

Using the following small signal model for NMOS, please calculate gain A = vout/vin in terms gm, C1, C2, RD, RL, RS and RG. (alpha numeric study) Draw the bode plot for gain and phase vs frequency diagram.

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Using the following small signal model for NMOS, please calculate gain A = vout/vin in terms gm, C1, C2, RD, RL, RS and RG. (alpha numeric study) Draw the bode plot for gain and phase vs frequency diagram.

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An NMOS amplifier is shown in Figure 1. Transistor M1 is biased in the saturation region for an amplifier application. The circuit is biased with a resistive voltage divider consisting of R1 and R2, a source degeneration resistor RS, and a load resistor RD. The drain bias current for the design is ID = 500 μA and VDS is 1.625 V. The device parameters are: L = 0.5 μm, W = 10 μm, kn’ = 200 μA/V2, Vtn = 0.5 V, and λn = 0. analyze the frequency response of the amplifier. a) Draw a midband small signal ac equivalent circuit model for the amplifier. For midband you can assume the reactance of Cin is sufficiently low that it is a short circuit. b) Derive an expression for the midband voltage gain transfer function Vout /Vsig. The amplified output signal is taken from the drain terminal and Vout = Vd. Write your gain function in terms of variables only. c) Evaluate the midband gain and calculate a value both in V/V and dB. d) Analyze the frequency response of the input network including the capacitor Cin. Find an expression for the transfer function H1(jω) = Vg/Vsig. e) Evaluate H1(jω) = Vg/Vsig and make a Bode plot of the magnitude of H1(jω). The x-axis is ω (log scale) and the y-axis is the magnitude in dB. f) Use the LTSPICE circuit template and verify the frequency response of the amplifier circuit. Include a copy of the schematic and the frequency response plot. Use 20 points per decade and a frequency span of 0.1 Hz to 100 Hz.
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For the shown PMOS amplifier driving load RL with the following parameters: Vdd = 2.5v RL = 10 kohm Vt = -0.5v lambda = 0.67 v-1 W/L = 10 upCox = 50.0 uA/v2 IBias = 100 uA a) Find the value of VIN for VOUT equal to zero. Hint: Current through the load resistor, RL, is zero b) Write a small signal model for this amplifier in SPICE. Hint: Don't need Vin , and know VIN when VOUT = 0 (part a) which helps calculate gm and g0 (r0 = 1/g0) c) Simulate your model and study the results, can you measure the gain for th given load (RL) ? d) Find its small signal gain Av = VOUT/VIN. Hint: Easy to find as you already have g0, gm, and RL e) Find the range for VOUT that the PMOS stays in the saturation region. f) Find the range for VIN that the PMOS stays in the saturation region. Hint for d and e: VOUT = (-ID-IBias)?RL

For the shown PMOS amplifier driving load RL with the following parameters: Vdd = 2.5v RL = 10 kohm Vt = -0.5v lambda = 0.67 v-1 W/L = 10 upCox = 50.0 uA/v2 IBias = 100 uA a) Find the value of VIN for VOUT equal to zero. Hint: Current through the load resistor, RL, is zero b) Write a small signal model for this amplifier in SPICE. Hint: Don't need Vin , and know VIN when VOUT = 0 (part a) which helps calculate gm and g0 (r0 = 1/g0) c) Simulate your model and study the results, can you measure the gain for th given load (RL) ? d) Find its small signal gain Av = VOUT/VIN. Hint: Easy to find as you already have g0, gm, and RL e) Find the range for VOUT that the PMOS stays in the saturation region. f) Find the range for VIN that the PMOS stays in the saturation region. Hint for d and e: VOUT = (-ID-IBias)?RL

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a. Find the resistor values to meet the specs. You may assume the has transistor β is high for the design, The supply voltage Vcc = 12 V. (20 points) b. Assume the transistor β = 100 and VA = 60 V and Rsig = 5kΩ, Find the transistor small signal parameters (gm, ro, and rbe). Show a clean and labeled small signal equivalent circuit and derive the expression for vo/vsig , Rin and Rout. Now find the numerical values for Rin, Rout, and gain = vo/vsig, (20 points) c. Run a transient simulation of the designed circuit in Multisim. Use the same BJT used in the lab simulation. Show the input voltage vsig and output voltage v0 on the same plot. Choose vsig to be at 1kHz and 10mV peak sinusoidal. Compare with calculated value of gain in part b. (10 points)
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