Question

Notify Me Bookmark

V1 = 3.8 V : Is the MOSFET in triode or saturation? Calculate the drain current: V1 = 1.5 V : Is the MOSFET in triode or saturation? Calculate the drain current:

V1 = 3.8 V : Is the MOSFET in triode or saturation? Calculate the drain current: V1 = 1.5 V : Is the MOSFET in triode or saturation? Calculate the drain current:

Image text
V 1 = 3.8 V : Is the MOSFET in triode or saturation? Calculate the drain current: V 1 = 1.5 V : Is the MOSFET in triode or saturation? Calculate the drain current:

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

Consider the CMOS inverter circuit with a capacitor connected at its output as shown below. Here Kn′ = 2 mA/V2 and VTn = 1.5 V, Kp′ = 1 mA/V2 and VTp = −0.5 V, all MOSFETs have L = 1 μm, and remember that K = K′(W/L). For a MOSFET in triode, use the S-R model with RON = 1 /K(|VGS| − |VT| ) (works for both nFET and pFET). a) Design Wp and Wn such that the overall circuit threshold, VTH, occurs at VDD/2 as shown in the graph. Here you can assume that at the threshold point VIN = VOUT = VTH. Use the smallest integer values you can for Wp and Wn, assuming the minimum width allowed is 1 μm. b) When VIN = VDD, draw the equivalent circuit. What is the time constant? c) When VIN = 0, draw the equivalent circuit. What is the time constant? d) Based on your answers from (b) and (c), which transition do you expect to be fastest: when vOUT transitions from VDD to 0 V, or when vOUT transitions from 0 V to VDD ? Why?
Solution
0 0

The Vin-Vout transfer characteristic of the circuit with MOSFET in Figure 1.1 is given in Figure 1.2.VT1 = VT2 =1V ; K'n1 = K'n2 ; W1 = 4 um ; L1 = 1 um and L2 = 2 um. Vin= 4 V : Calculate the channel width of transistor M2. For the given MOSFET circuit, Vin-Vout transfer characteristic of this circuit is provided below. Calculate channel width of M2 transistor (W2) if VT1 = V12 = 1 V ; Kn1 = Kn2; W1 = 4um ; L1 = 1um, L2 = 2um and Vin = 4V. Kn = unCox and you need to check whether transistors are operating in saturation or not. M1 and M2 may not operate in the same region.
Solution
3 0

Consider the MOSFET differential amplifier shown below, with IO = 2 mA, and RL = 10 kΩ, RSS = 100 kΩ, VDD = +8 V and VSS = −8 V. The NMOS transistors in the circuit are nominally identical, with kn = 2 mA/V2, VTnn = 1.0 V and ro = 100 kΩ. The PMOS transistors in the circuit are nominally identical, with kp = 2 mA/V2, |VTp| = 1.0 V and ro = 100 kΩ. a) First consider the DC bias point. Assuming that the current mirror requires at least IV (across Io source) in order to operate, what are the maximum and minimum common-mode DC input voltages (V1 = V2) over which the differential amplifier can operate with both transistors in saturation mode? b) Consider ac small signal operation for differential input (v1 = +Δv/2 and v2 = −Δv/2) and the indicated output (v0 across RL). Find the overall voltage gain (v0/Δv), including sign. c) Find the input resistance and output resistance corresponding to this mode (output resistance is looking to left from capacitor). d) Next, consider ac small signal operation for common-mode input (v1 = v2 = Δv) and the indicated vo. Find the overall voltage gain ((vo/Δv) corresponding to this mode. e) Find the common-mode rejection ratio (CMRR).
Solution
0 0