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VDD a) What is the purpose of C∞ at the gate of Q2 and the output? b) Where should the body terminal of Q2 be connected to in order to ensure there is no body effect? c) Express Rin . Assume ro = ∞ and there is no body effect. d) Express Rout . Assume ro < ∞ and there is no body effect. e) Express voltage gain. Assume r0 = ∞ and there is no body effect.

VDD a) What is the purpose of C∞ at the gate of Q2 and the output? b) Where should the body terminal of Q2 be connected to in order to ensure there is no body effect? c) Express Rin . Assume ro = ∞ and there is no body effect. d) Express Rout . Assume ro < ∞ and there is no body effect. e) Express voltage gain. Assume r0 = ∞ and there is no body effect.

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VDD a) What is the purpose of C ∞ at the gate of Q 2 and the output? b) Where should the body terminal of Q2 be connected to in order to ensure there is no body effect? c) Express R in . Assume r o = ∞ and there is no body effect. d) Express R out . Assume r o < ∞ and there is no body effect. e) Express voltage gain. Assume r 0 = ∞ and there is no body effect.

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In the following CMOS inverter logic gate, assume the transistor size of (W/L)n = 0.8 μm/0.20 μm and (W/L)p = 1.6 μm/0.20 μm and VDD = 3.0 V. (a). Determine the operation modes (e. g. cut-off, linear or saturation) of the NMOS and PMOS transistors respectively at Vin = 0.2 V, 0.9 V, 1.5 V, 2.1 V, and 2.8 V. Using a table to list the operation modes is recommended. (Note: You may need to do multiple calculations for the data point Vin = 1.5 V with Vin = 1.4 V or 1.6 V). (b). Using the tabulated results in (a) or otherwise, determine the current flowing through both the NMOS and PMOS transistors at the different input voltage Vin in (a). (c). Using Matlab or Excel, plot a graph of the current against the input voltage Vin. (d). Using the above results in (a) and (b) or otherwise, determine the output voltage Vout at the different input voltage Vin in (a). (e). Using Matlab or Excel, plot a graph of the voltage transfer characteristics (VTC) (i. e. output voltage Vout versus input voltage Vin ) of the CMOS inverter with the five sets of data points obtained. It is given that the threshold voltage VTon = 0.50 V and μnCox = 430 μA/V2 for the NMOS transistor while VTop = −0.50 V and μpCox = 210 μA/V2 for the PMOS transistor. Assume the long-channel approximation of the MOSFET and there is no body effect (i. e. the body terminal of the MOSFETs are properly connected respectively to ground and VDD).
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For the SRAM read operation sub-circuit below the gate length for both transistors is Lmin. The gate width of the access transistor Qa is 3 μm For t < 0 seconds, vB is pre-charged to VDD, vW = 0 V and therefore vQ = 0 V. At t = 0 seconds, vW is switched to VDD (note: since γ = 0 V1 /2, there is no body effect). a. (10) What is the gate width of the pull-down transistor, Qn if the maximum value reached by vQ for t > 0 seconds is the n-channel threshold voltage, Vt0. b) (10) What is the current, IB, at t = 0 seconds? c) (10) What is the current IB when vB has decreased 0.2 V, as indicated on the plot?For the SRAM read operation sub-circuit below the gate length for both transistors is Lmin. The gate width of the access transistor Qa is 3 μm For t < 0 seconds, vB is pre-charged to VDD, vW = 0 V and therefore vQ = 0 V. At t = 0 seconds, vW is switched to VDD (note: since γ = 0 V1 /2, there is no body effect). a. (10) What is the gate width of the pull-down transistor, Qn if the maximum value reached by vQ for t > 0 seconds is the n-channel threshold voltage, Vt0. b) (10) What is the current, IB, at t = 0 seconds? c) (10) What is the current IB when vB has decreased 0.2 V, as indicated on the plot?
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For the SRAM read operation sub-circuit below the gate length for both transistors is Lmin . The gate width of the access transistor Qa is 3 μm For t < 0 seconds, vB is pre-charged to VDD, vW = 0 V and therefore vQ = 0 V. At t = 0 seconds, VW is switched to VDD (note: since γ = 0 V1/2, there is no body effect). a. (10) What is the gate width of the pull-down transistor, Qn if the maximum value reached by vQ for t > 0 seconds is the n-channel threshold voltage, Vt0. b. (10) Which time below is the nearest estimate of the time it takes for vQ to reach its maximum value, Vt0 (hint: use the method of average currents). circle one i. 5 ps ii. 50 ps iii. 500 ps iv. 5 ns c. (10) Which time below is the nearest estimate of the time it takes for vB to drop 200 mV below VDD (hint: most of the time occurs after vQ reaches its maximum voltage). circle one i. 30 ps ii. 300 ps iii. 3 ns iv. 30 ns technology parameters VDD = 3 Vkn′ = 2 mA/V2 kp, = 0.5 mA/V2 γ = 0.0 V1 /2 2ф. = 0.6 Vλ = 0 V−1 Lmin = 0.5 μmWmin = 0.5 μm|Vto| = 1 V for both n and p channels ( 30 points)
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