Question

Notify Me Bookmark

We wish to replace the circuit below with its Norton equivalent. All resistors are the same, R = 4.3 kΩ. The dependent current source is controlled by vx as shown, where G = R-1 = (4.3 kΩ)-1 = 0.23256 μs. The voltage source is V = 8 V. The short circuit current between terminals A and B is isc = mA. The equivalent resistance between terminals A and B is Req = kΩ.

We wish to replace the circuit below with its Norton equivalent. All resistors are the same, R = 4.3 kΩ. The dependent current source is controlled by vx as shown, where G = R-1 = (4.3 kΩ)-1 = 0.23256 μs. The voltage source is V = 8 V. The short circuit current between terminals A and B is isc = mA. The equivalent resistance between terminals A and B is Req = kΩ.

Image text
We wish to replace the circuit below with its Norton equivalent.
All resistors are the same, R = 4.3 k Ω . The dependent current source is controlled by v x as shown, where G = R 1 = ( 4.3 k Ω ) − 1 = 0.23256 μ s . The voltage source is V = 8 V .
The short circuit current between terminals A and B is i s c = ◻ mA.
The equivalent resistance between terminals A and B is R e q = ◻ k Ω .

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

Electronics 2 - Homework 2 Second semester 2023-2024 Solve the following questions, and verify your solution using LTSpice. simulation. For each question you need to:Solve the question by handProvide a screenshot of the circuitProvide a screenshot confirming the hand calculations Note that you can change the BJT parameter Beta by adding a SPICE directive and changing the parameter BF Question 1: BJT transistors The parameters for each transistor in the figure below are β = 80, and VBE(m) = 0.7 V. Determine all the voltages and currents in the circuit. Circuit for question 1 Question 2: Amplifier Configurations The signal source in the circuit below is vs = 5 sin⁡(100000πt)mV. The transistor parameters are β = 120, and the capacitors are 10 μF (a) Design the circuit such that IC = 0.25 mA and VCE = 3 V. (b) Find the open circuit voltage gain Avo (c) Find the input resistance Rin (from the base of the transistor) (d) Find the output resistance (e) Use the amplifier model (Avo, Rin, Ro) to find vo(t). Circuit for question 2 Question 3: Amplifier Configurations Consider the circuit shown. The transistor current gain β = 180. and the source signal has a frequency of 100 kHz and the capacitors are 10 μF Note that the current source is replaced by an open circuit in the small signal model equivalent circuit. Determine: (a) the voltage gain from source to load, (b) the input resistance seen by the source (c) the output resistance

Solution
0 0

Consider the amplifier circuit in Fig. 4 which amplifies input Vin to output Vout. The circuit accomplishes this by using a bipolar junction transistor or BJT. The BJT is a three-terminal circuit element with nodes B, C, and E. In some situations, the BJT can be modeled with an equivalent linear circuit containing a voltage-dependent current source as shown in Fig. 5. Figure 4: Amplifier circuit with BJT Figure 5: Equivalent circuit model for BJT We want to find the Thevenin and Norton equivalent of the amplifier circuit across the terminals Vout (i. e. , between nodes C and E ). Note: You can use the parallel operator (||) in your final answers. (a) Redraw the original amplifier circuit in Fig. 4 but with the BJT equivalent circuit model in Fig. 5 substituted. (b) Use the open circuit test to find the Thevenin voltage, Vth , between nodes C and E. Recall the open circuit test finds Vout = Voc when an open circuit is connected across the terminals, then Vth = Voc. (c) Use the short circuit test to find the Norton current, Ino, between nodes C and E. Recall the short circuit test finds Iout = Isc when a short circuit is connected between the terminals, then Ino = Isc. (d) Find the Thevenin/Norton resistance Rth = Rno using Rth = Vth Ino. (e) We can also find Rth by turning off all of the independent sources (but not the dependent sources) and deriving the equivalent resistance seen from the terminals. Derive Rth with this method. Does it match your answer from part (c)? Hint: To simplify the dependent source, focus on first finding VBE.
Solution
0 0

Figure 1 shows a single stage common source MOSFET amplifier circuit. We wish to design the circuit to meet the following design specifications: Load Resistance: RL = 100 KΩ Input Resistance: Ri > 200 KΩ Mid-band Gain: Gv = Vo/Vi = −50 ± 20% Supply Voltage: +15 Volts Circuit Capacitors: CG = 10μF; CS = 47μF; CD = 10μF Figure 1. Common Source MOSFET Amplifier Pre-lab: (a) Design the amplifier to meet the specifications above by choosing values for resistors R1, R2, RD and RS. Begin your design by choosing an appropriate value for the bias current ID. If ID ≈ 0.3 mA, assume VT ≈ 1.7 V, Kn ≈ 0.02 A/V2 and VA = 100 V(λ = 0.01 V−1). Find the small signal approximation of the input resistance Rin where Rin = R1∥R2 Find the small signal approximation of the output resistance Ro, where Ro is given as Ro = RD∥RL∥ro. The small signal mid-band gain of the amplifier is given by Gv = −gmRo where gm = 2knID = kn(VGS−VT) Once you choose ID the DC biasing of the transistor can be found using simple rules of thumb. The voltage VG should be approximately equal to VDD/3 > VT. For maximum symmetry, VD should be biased at the midpoint between VD(Max) and VD(Min). Clearly, the maximum VD is VDD and the minimum VD > VG−Vt. For example, if Vt = 1.7 V and VG = 1/3VDD = 5 V, then VD ≈ 9 V for maximum symmetry.

Figure 1 shows a single stage common source MOSFET amplifier circuit. We wish to design the circuit to meet the following design specifications: Load Resistance: RL = 100 KΩ Input Resistance: Ri > 200 KΩ Mid-band Gain: Gv = Vo/Vi = −50 ± 20% Supply Voltage: +15 Volts Circuit Capacitors: CG = 10μF; CS = 47μF; CD = 10μF Figure 1. Common Source MOSFET Amplifier Pre-lab: (a) Design the amplifier to meet the specifications above by choosing values for resistors R1, R2, RD and RS. Begin your design by choosing an appropriate value for the bias current ID. If ID ≈ 0.3 mA, assume VT ≈ 1.7 V, Kn ≈ 0.02 A/V2 and VA = 100 V(λ = 0.01 V−1). Find the small signal approximation of the input resistance Rin where Rin = R1∥R2 Find the small signal approximation of the output resistance Ro, where Ro is given as Ro = RD∥RL∥ro. The small signal mid-band gain of the amplifier is given by Gv = −gmRo where gm = 2knID = kn(VGS−VT) Once you choose ID the DC biasing of the transistor can be found using simple rules of thumb. The voltage VG should be approximately equal to VDD/3 > VT. For maximum symmetry, VD should be biased at the midpoint between VD(Max) and VD(Min). Clearly, the maximum VD is VDD and the minimum VD > VG−Vt. For example, if Vt = 1.7 V and VG = 1/3VDD = 5 V, then VD ≈ 9 V for maximum symmetry.
Solution
1 0