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We would like to design the following circuit such that the worst case propagation delays (tpHL and tpLH ) are limited to 2.14 ns. Use Elmore delay equation to determine the W/L for PMOS and NMOS used in the 2 -input NOR gate. Assume that VDD = 1.2 V, K′n = 90 uA/V2, Vtn = 0.4 V, K′p = 50 uA/V2, and Vtp = −0.5 V in the 100 nm technology node. Also assume that the transistors stay in saturation region for the length of the transition.

We would like to design the following circuit such that the worst case propagation delays (tpHL and tpLH ) are limited to 2.14 ns. Use Elmore delay equation to determine the W/L for PMOS and NMOS used in the 2 -input NOR gate. Assume that VDD = 1.2 V, K′n = 90 uA/V2, Vtn = 0.4 V, K′p = 50 uA/V2, and Vtp = −0.5 V in the 100 nm technology node. Also assume that the transistors stay in saturation region for the length of the transition.

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We would like to design the following circuit such that the worst case propagation delays ( p p H L and t p L H ) are limited to 2.14 ns. Use Elmore delay equation to determine the W/L for PMOS and NMOS used in the 2 -input NOR gate. Assume that VDD = 1.2 V , K ′ n = 90 u A / V 2 , V t n = 0.4 V , K ′ p = 50 u A / V 2 , and V t p = − 0.5 V in the 100 n m technology node. Also assume that the transistors stay in saturation region for the length of the transition.

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