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What is the drain current in microamps for a PMOS FET with Vgs = −567 mV, Vds = −763 mV, and Vsb = 0 V ? Neglect the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 33 nm. Use: W = 9.4 μm, L = 0.4 μm, Toxe = 29 angstroms, Vt = −313 mV, and μps = 185 cm^2 /Vs. Answer:

What is the drain current in microamps for a PMOS FET with Vgs = −567 mV, Vds = −763 mV, and Vsb = 0 V ? Neglect the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 33 nm. Use: W = 9.4 μm, L = 0.4 μm, Toxe = 29 angstroms, Vt = −313 mV, and μps = 185 cm^2 /Vs. Answer:

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What is the drain current in microamps for a PMOS FET with V g s = − 567 m V , V d s = − 763 m V , and V s b = 0 V ? Neglect the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of W d m a x = 33 n m . Use: W = 9.4 μ m , L = 0.4 μ m , Toxe = 29 angstroms, V t = − 313 m V , and μ p s = 185 c m ∧ 2 / V s .
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