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What is the drain current in microamps for a PMOS FET with Vgs = −682 mV, Vds = −780 mV, and Vsb = 0 V ? Include the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 60 nm. Use: W = 4.1 μm, L = 0.4 μm, Toxe = 44 angstroms, Vt = −349 mV, μps = 101 cm^2 /Vs, and Vsat = 6×10^6 cm/s.

What is the drain current in microamps for a PMOS FET with Vgs = −682 mV, Vds = −780 mV, and Vsb = 0 V ? Include the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 60 nm. Use: W = 4.1 μm, L = 0.4 μm, Toxe = 44 angstroms, Vt = −349 mV, μps = 101 cm^2 /Vs, and Vsat = 6×10^6 cm/s.

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What is the drain current in microamps for a PMOS FET with Vgs = − 682 m V , Vds = − 780 m V , and Vsb = 0 V ? Include the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of W d m a x = 60 n m . Use: W = 4.1 μ m , L = 0.4 μ m , Toxe = 44 angstroms, Vt = − 349 m V , μ p s = 101 c m ∧ 2 / V s , and Vsat = 6 × 10 ∧ 6 c m / s .

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