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What is the drain current in microamps for an NMOS FET with Vgs = 790 mV, Vds = 186 mV, and Vsb = 0 V ? Include the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 86 nm. Use: W = 8.5 μm, L = 0.9 μm, Toxe = 59 angstroms, Vt = 359 mV, μns = 201 cm^2/Vs, and Vsat = 8×10^6 cm/s. Answer: Check

What is the drain current in microamps for an NMOS FET with Vgs = 790 mV, Vds = 186 mV, and Vsb = 0 V ? Include the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 86 nm. Use: W = 8.5 μm, L = 0.9 μm, Toxe = 59 angstroms, Vt = 359 mV, μns = 201 cm^2/Vs, and Vsat = 8×10^6 cm/s. Answer: Check

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What is the drain current in microamps for an NMOS FET with Vgs = 790 mV, Vds = 186 mV, and Vsb = 0 V ? Include the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of W d m a x = 86 n m . Use: W = 8.5 μ m , L = 0.9 μ m , Toxe = 59 angstroms, V t = 359 m V , μ n s = 201 c m ∧ 2 / V s , and Vsat = 8 × 10 ∧ 6 c m / s .
Answer: ◻ Check

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