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What is the flat-band voltage in millivolts for a MOS capacitor with an N+ polysilicon gate and a P-type body doped with boron at a concentration of 3.5×10^17 /cm^3 ? Use: kT/q = 26 mV and ni = 1.5×10^10 /cm^3 at 300∘K. Also use Eg = 1.12 eV and Xsi = the electron affinity = 4.05 eV for silicon. Assume that the intrinsic Fermi level, Ei, is in the middle of the band-gap. For this question, be sure to give your answer to the nearest millivolt! Answer: The correct answer is: -1001

What is the flat-band voltage in millivolts for a MOS capacitor with an N+ polysilicon gate and a P-type body doped with boron at a concentration of 3.5×10^17 /cm^3 ? Use: kT/q = 26 mV and ni = 1.5×10^10 /cm^3 at 300∘K. Also use Eg = 1.12 eV and Xsi = the electron affinity = 4.05 eV for silicon. Assume that the intrinsic Fermi level, Ei, is in the middle of the band-gap. For this question, be sure to give your answer to the nearest millivolt! Answer: The correct answer is: -1001

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What is the flat-band voltage in millivolts for a MOS capacitor with an N+ polysilicon gate and a P-type body doped with boron at a concentration of 3.5 × 10 ∧ 17 / c m ∧ 3 ? Use: k T / q = 26 m V and n i = 1.5 × 10 ∧ 10 / c m ∧ 3 at 300 ∘ K . Also use E g = 1.12 e V and X s i = the electron affinity = 4.05 e V for silicon. Assume that the intrinsic Fermi level, Ei, is in the middle of the band-gap. For this question, be sure to give your answer to the nearest millivolt!
Answer: ◻ The correct answer is: -1001

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