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What is the minimum threshold voltage in millivolts that can be used for an PMOS FET to achieve an off current, loff, when Vgs = 0 V of no more than 0.74 nA per W/L at 300∘K ? Assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 46 nm, and an effective oxide thickness, Toxe, of 37 angstroms. Use kT/q = 26 mV at 300∘K. Answer:

What is the minimum threshold voltage in millivolts that can be used for an PMOS FET to achieve an off current, loff, when Vgs = 0 V of no more than 0.74 nA per W/L at 300∘K ? Assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 46 nm, and an effective oxide thickness, Toxe, of 37 angstroms. Use kT/q = 26 mV at 300∘K. Answer:

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What is the minimum threshold voltage in millivolts that can be used for an PMOS FET to achieve an off current, loff, when V g s = 0 V of no more than 0.74 n A per W / L at 300 ∘ K ? Assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 46 n m , and an effective oxide thickness, Toxe, of 37 angstroms. Use k T / q = 26 m V at 300 ∘ K .
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