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What is the minimum threshold voltage in millivolts that can be used for an PMOS FET to achieve an off current, loff, when Vgs = 0V of no more than 0.21nA per W/L at 300°K? Assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 30nm, and an effective oxide thickness, Toxe, of 21 angstroms. Use kT/q = 26mV at 300°K.

What is the minimum threshold voltage in millivolts that can be used for an PMOS FET to achieve an off current, loff, when Vgs = 0V of no more than 0.21nA per W/L at 300°K? Assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 30nm, and an effective oxide thickness, Toxe, of 21 angstroms. Use kT/q = 26mV at 300°K.

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What is the minimum threshold voltage in millivolts that can be used for an PMOS FET to achieve an off current, loff, when Vgs = 0V of no more than 0.21nA per W/L at 300°K? Assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 30nm, and an effective oxide thickness, Toxe, of 21 angstroms. Use kT/q = 26mV at 300°K.

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