Question

Notify Me Bookmark

What is the minimum value of |Vds| that will keep a MOSFET in saturation in millivolts, for a PMOS FET with Vgs = −892 mV, and Vsb = 0 V ? Neglect the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 40 nm. Use: W = 4.5 μm, L = 0.9 μm, Toxe = 31 angstroms, Vt = −482 mV, and μps = 112 cm^2/Vs. Answer: The correct answer is: 333

What is the minimum value of |Vds| that will keep a MOSFET in saturation in millivolts, for a PMOS FET with Vgs = −892 mV, and Vsb = 0 V ? Neglect the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 40 nm. Use: W = 4.5 μm, L = 0.9 μm, Toxe = 31 angstroms, Vt = −482 mV, and μps = 112 cm^2/Vs. Answer: The correct answer is: 333

Image text
What is the minimum value of | V d s | that will keep a MOSFET in saturation in millivolts, for a PMOS FET with Vgs = − 892 m V , and Vsb = 0 V ? Neglect the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 40 n m . Use: W = 4.5 μ m , L = 0.9 μ m , Toxe = 31 angstroms, V t = − 482 m V , and μ p s = 112 c m 2 / V s .
Answer: ◻ The correct answer is: 333

Detailed Answer

6 0

Please enter your email here. You will get email when this question is answered by our tutor.

Answer
Doubtrix Logo

This Problem has been solved!

You'll get a detailed, step-by-step and expert verified solution.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up
  • Student Reviews:
  • (6)
  • Correct answers (6)
  • Complete solution (6)
  • Step-by-step solution (6)
  • Fully explained (6)

Similar/Related Questions

What is the minimum value of Vds that will keep a MOSFET in saturation in millivolts, for an NMOS FET with Vgs = 1044 mV, and Vsb = 0 V ? Neglect the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 71 nm. Use: W = 5.6 μm, L = 0.4 μm, Toxe = 29 angstroms, Vt = 421 mV, and μns = 396 cm∧2 /Vs. Answer:
Solution
3 0

What is the drain current in microamps for a PMOS FET with Vgs = −567 mV, Vds = −763 mV, and Vsb = 0 V ? Neglect the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 33 nm. Use: W = 9.4 μm, L = 0.4 μm, Toxe = 29 angstroms, Vt = −313 mV, and μps = 185 cm^2 /Vs. Answer:

Solution
0 0

What is the drain current in microamps for a PMOS FET with Vgs = −682 mV, Vds = −780 mV, and Vsb = 0 V ? Include the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 60 nm. Use: W = 4.1 μm, L = 0.4 μm, Toxe = 44 angstroms, Vt = −349 mV, μps = 101 cm^2 /Vs, and Vsat = 6×10^6 cm/s.

Solution
0 0