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What is the minimum value of Vds that will keep a MOSFET in saturation in millivolts, for an NMOS FET with Vgs = 1044 mV, and Vsb = 0 V ? Neglect the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 71 nm. Use: W = 5.6 μm, L = 0.4 μm, Toxe = 29 angstroms, Vt = 421 mV, and μns = 396 cm∧2 /Vs. Answer:

What is the minimum value of Vds that will keep a MOSFET in saturation in millivolts, for an NMOS FET with Vgs = 1044 mV, and Vsb = 0 V ? Neglect the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 71 nm. Use: W = 5.6 μm, L = 0.4 μm, Toxe = 29 angstroms, Vt = 421 mV, and μns = 396 cm∧2 /Vs. Answer:

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What is the minimum value of Vds that will keep a MOSFET in saturation in millivolts, for an NMOS FET with Vgs = 1044 m V , and Vsb = 0 V ? Neglect the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 71 n m . Use: W = 5.6 μ m , L = 0.4 μ m , Toxe = 29 angstroms, V t = 421 m V , and μ n s = 396 c m ∧ 2 / V s .
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