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What is the subthreshold leakage current in nanoamps for a PMOS FET at 300∘K when it has Vgs = −158 mV ? Assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 57 nm, and an effective oxide thickness, Toxe, of 26 angstroms. Use: W = 1.2 μm, L = 1.0 μm, Vt = −384 mV and kT/q = 26 mV at 300∘K. Note that since the answer for this question may be very small, be sure to give your answer to at least 3 significant figures! Answer: The correct answer is: -0.057

What is the subthreshold leakage current in nanoamps for a PMOS FET at 300∘K when it has Vgs = −158 mV ? Assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 57 nm, and an effective oxide thickness, Toxe, of 26 angstroms. Use: W = 1.2 μm, L = 1.0 μm, Vt = −384 mV and kT/q = 26 mV at 300∘K. Note that since the answer for this question may be very small, be sure to give your answer to at least 3 significant figures! Answer: The correct answer is: -0.057

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What is the subthreshold leakage current in nanoamps for a PMOS FET at 300 ∘ K when it has V g s = − 158 m V ? Assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 57 n m , and an effective oxide thickness, Toxe, of 26 angstroms. Use: W = 1.2 μ m , L = 1.0 μ m , V t = − 384 m V and k T / q = 26 m V at 300 ∘ K . Note that since the answer for this question may be very small, be sure to give your answer to at least 3 significant figures!
Answer: ◻ The correct answer is: -0.057

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